Stacking-order effect on spin-orbit torque, spin-Hall magnetoresistance, and magnetic anisotropy in Ni${}_{81}$Fe${}_{19}$-IrO${}_2$ bilayers

Abstract

The 5d transition-metal oxides have been an intriguing platform to demonstrate efficient charge to spin current conversion due to a unique electronic structure dominated by strong spin-orbit coupling. Here, we report on stacking-order effect of spin-orbit torque (SOT), spin-Hall magnetoresistance, and magnetic anisotropy in bilayer Ni${}_{81}$Fe${}_{19}$-5d iridium oxide, IrO${}_2$. While all the IrO${}_2$ and Pt control samples exhibit large dampinglike-SOT generation stemming from the efficient charge to spin current conversion, the magnitude of the SOT is larger in the IrO${}_2$ (Pt)-bottom sample than in the IrO${}_2$ (Pt)-top one. The fieldlike-SOT has even more significant stack order effect, resulting in an opposite sign in the IrO${}_2$ samples in contrast to the same sign in the Pt samples. Furthermore, we observe that the magnetic anisotropy energy density and the anomalous Hall effect are increased in the IrO${}_2$ (Pt)-bottom sample, suggesting enhanced interfacial perpendicular magnetic anisotropy. Our findings highlight the significant influence of the stack order on spin transport and magnetotransport properties of Ir oxide/ferromagnet systems, providing useful information on design of SOT devices including 5d transition-metal oxides.

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Cited by in corpus (5)

• Room temperature spin-orbit torque efficiency and magnetization switching in SrRuO3-based heterostructures
• Spin-orbit torque generation in bilayers composed of CoFeB and epitaxial SrIrO${}_3$ grown on an orthorhombic DyScO${}_3$ substrate
• Spin current generation from an epitaxial tungsten dioxide WO${}_2$
• Effect of crystallinity on spin-orbit torque in 5$\text{d}$ iridium oxide IrO${}_2$
• Effect of interface quality on spin Hall magnetoresistance in Pt/MgFe${}_2$O${}_4$ bilayers