Spin-orbit torque generation in NiFe/IrO2 bilayers

Abstract

The 5d transition-metal oxides have a unique electronic structure dominated by strong spin-orbit coupling and hence they can be an intriguing platform to explore spin-current physics. Here, we report on room-temperature generation of spin-orbit torque (SOT) from a conductive 5d iridium oxide, IrO2. By measuring second-harmonic Hall resistance of Ni81Fe19/IrO2 bilayers, we find both dampinglike and fieldlike SOTs. The former is larger than the latter, enabling easier control of magnetization. We also observe that the dampinglike SOT efficiency has a significant dependence on IrO2 thickness, which is well described by the drift-diffusion model based on the bulk spin Hall effect. We deduce the effective spin Hall angle of +0.093 +- 0.003 and the spin-diffusion length of 1.7 +- 0.2 nm. By comparison with control samples Pt and Ir, we show that the effective spin Hall angle of IrO2 is comparable to that of Pt and seven times higher than that of Ir. The fieldlike SOT efficiency has a negative sign without appreciable dependence on the thickness, in contrast to the dampinglike SOT. This suggests that the fieldlike SOT likely stems from the interface. These experimental findings suggest that the uniqueness of the electronic structure of 5d transition-metal oxides is crucial for highly efficient charge to spin-current conversion.

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Cited by in corpus (7)

• Oxide spin-orbitronics: spin-charge interconversion and topological spin textures
• Spin-orbit torque generation in bilayers composed of CoFeB and epitaxial SrIrO${}_3$ grown on an orthorhombic DyScO${}_3$ substrate
• Stacking-order effect on spin-orbit torque, spin-Hall magnetoresistance, and magnetic anisotropy in Ni${}_{81}$Fe${}_{19}$-IrO${}_2$ bilayers
• Spin current generation from an epitaxial tungsten dioxide WO${}_2$
• Effect of crystallinity on spin-orbit torque in 5$\text{d}$ iridium oxide IrO${}_2$
• Topological Electronic Structure and Transport Properties of the Distorted Rutile-type WO${}_2$
• Effect of interface quality on spin Hall magnetoresistance in Pt/MgFe${}_2$O${}_4$ bilayers