Spin and Valley States in Gate-defined Bilayer Graphene Quantum Dots

Abstract

In bilayer graphene, electrostatic confinement can be realized by a suitable design of top and back gate electrodes. We measure electronic transport through a bilayer graphene quantum dot, which is laterally confined by gapped regions and connected to the leads via p-n junctions. Single electron and hole occupancy is realized and charge carriers $n=1,2,\dots 50$ can be filled successively into the quantum system with charging energies exceeding $10\mathrm{meV}$. For the lowest quantum states, we can clearly observe valley and Zeeman splittings with a spin g-factor of $g_s\approx 2$. In the low field-limit, the valley splitting depends linearly on the perpendicular magnetic field and is in qualitative agreement with calculations.

7 pages, 4 figures

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• Van der Waals heterostructures
• 2D materials and van der Waals heterostructures
• Boron nitride substrates for high-quality graphene electronics
• Chaotic Dirac billiard in graphene quantum dots
• Gate-induced insulating state in bilayer graphene devices
• Asymmetry gap in the electronic band structure of bilayer graphene
• Silicon Quantum Electronics
• The electronic properties of bilayer graphene
• Spin qubits in graphene quantum dots
• Phase Coherent Transport of Charges in Graphene Quantum Billiard
• Energy spectra of quantum rings
• Tunable Graphene Single Electron Transistor
• Aharonov-Bohm effect in graphene
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• A valley-spin qubit in a carbon nanotube
• Large spin-orbit coupling in carbon nanotubes
• Charge Detection in Graphene Quantum Dots
• Electrostatically induced quantum point contact in bilayer graphene
• Gate defined zero- and one-dimensional confinement in bilayer graphene
• Edge currents shunt the insulating bulk in gapped graphene
• Coupled quantum dots in bilayer graphene
• Gate-defined graphene double quantum dot and excited state spectroscopy
• Gate-defined electron-hole double dots in bilayer graphene
• Electron-electron interactions in bilayer graphene quantum dots

Cited by in corpus (89)

• Excited states in bilayer graphene quantum dots
• Electron-hole crossover in gate-controlled bilayer graphene quantum dots
• Tunable Valley Splitting due to Topological Orbital Magnetic Moment in Bilayer Graphene Quantum Point Contacts
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• Observation of the spin-orbit gap in bilayer graphene by one-dimensional ballistic transport
• Automated tuning of double quantum dots into specific charge states using neural networks
• Charge detection in gate-defined bilayer graphene quantum dots
• Gap Opening in Twisted Double Bilayer Graphene by Crystal fields
• Tunable valley splitting and bipolar operation in graphene quantum dots
• Influence of minivalleys and Berry curvature on electrostatically induced quantum wires in gapped bilayer graphene
• Quartet states in two-electron quantum dots in bilayer graphene
• Pauli Blockade of Tunable Two-Electron Spin and Valley States in Graphene Quantum Dots
• Dominance of extrinsic scattering mechanisms in the orbital Hall effect: graphene, transition metal dichalcogenides and topological antiferromagnets
• Orbital angular momentum of Bloch electrons: equilibrium formulation, magneto-electric phenomena, and the orbital Hall effect
• Visualization and Manipulation of Bilayer Graphene Quantum Dots with Broken Rotational Symmetry and Nontrivial Topology
• Shell Filling and Trigonal Warping in Graphene Quantum Dots
• Coherent Jetting behind a gate-defined Channel in Bilayer Graphene
• Cornertronics in Two-Dimensional Second-Order Topological Insulators
• Engineering of the topological magnetic moment of electrons in bilayer graphene using strain and electrical bias
• Probing two-electron multiplets in bilayer graphene quantum dots
• A Movable Valley Switch Driven by Berry Phase in Bilayer Graphene Resonators
• Pulsed-gate spectroscopy of single-electron spin states in bilayer graphene quantum dots
• Magnetic field-tunable valley-contrasting pseudomagnetic confinement in graphene
• Valley two-qubit system in a MoS${}_2$-monolayer gated double quantum dot
• Spin-valley locking for in-gap quantum dots in a MoS2 transistor
• Open quantum systems beyond Fermi's golden rule: Diagrammatic expansion of the steady-state time-convolutionless master equation
• Emission and Coherent Control of Levitons in Graphene
• Fully automated identification of 2D material samples
• The effect of valley, spin and band nesting on the electronic properties of gated quantum dots in a single layer of transition metal dichalcogenides (TMDCs)
• Control of Giant Topological Magnetic Moment and Valley Splitting in Trilayer Graphene
• Theory of tunneling spectra for a few-electron bilayer graphene quantum dot
• Quantum Confinement of Electron-Phonon Coupling in Graphene Quantum Dots
• Counting Statistics of Single Electron Transport in Bilayer Graphene Quantum Dots
• Gate-defined electron interferometer in bilayer graphene
• Dispersive sensing of charge states in a bilayer graphene quantum dot
• Low Magnetic Field Regime of a Gate-Defined Constriction in High-Mobility Graphene
• Valley polarized current and resonant electronic transport in a non-uniform ${\mathbf{MoS}}_2$ zigzag nanoribbon
• Sublattice dependence and gate-tunability of midgap and resonant states induced by native dopants in Bernal-stacked bilayer graphene
• Electrostatic quantum dot confinement in phosphorene
• Tunable interdot coupling in few-electron bilayer graphene double quantum dots
• Single-Carrier Transport in Graphene/hBN Superlattices
• Large twisting angles in Bilayer graphene Moire quantum dot structures
• Radio-frequency reflectometry in bilayer graphene devices utilizing micro graphite back-gates
• Kagomé network of chiral miniband-edge states in double-aligned graphene-hexagonal boron nitride structures
• A Mechanically Tunable Quantum Dot in a Graphene Break Junction
• Zigzag edge ferromagnetism of triangular-graphene-quantum-dot-like system
• Specular electron focusing between gate-defined quantum point contacts in bilayer graphene
• A strain-engineered graphene qubit in a nanobubble
• Scattering of topological kink-antikink states in bilayer graphene structures
• Nonequilibrium Kondo effect in a graphene-coupled quantum dot in the presence of a magnetic field
• Tunneling Spectroscopy of Quantum Hall States in Bilayer Graphene PN Networks
• Pauli blockade catalogue and three- and four-particle Kondo effect in bilayer graphene quantum dots
• Extended Hubbard model describing small multi-dot arrays in bilayer graphene
• Spin and valley manipulation in single and double electrostatic silicene quantum dots
• Low-temperature environments for quantum computation and quantum simulation
• Impact of competing energy scales on the shell-filling sequence in elliptic bilayer graphene quantum dots
• Scanning Gate Microscopy of Localized States in a gate-defined Bilayer Graphene Channel
• Switching spin filling sequence in a bilayer graphene quantum dot through trigonal warping
• Dipole coupling of a bilayer graphene quantum dot to a high-impedance microwave resonator
• Kondo induced π-phase shift of microwave photons in a circuit quantum electrodynamics architecture
• Electric-field independent spin-orbit coupling gap in hBN-encapsulated bilayer graphene
• Inducing topological flat bands in bilayer graphene with electric and magnetic superlattices
• Tunable p-n junction barriers in few-electron bilayer graphene quantum dots
• Three-carrier spin blockade and coupling in bilayer graphene double quantum dots
• Phonon-limited valley life times in single-particle bilayer graphene quantum dots
• Electrically-tunable graphene nanomechanical resonators
• Tunable spin-orbit splitting in bilayer graphene/WSe${}_2$ quantum devices
• Electrically controlled crossover between $2\pi$- and $4\pi$-Josephson effects through topologically-confined channels in silicene
• Interacting holes in a gated WSe${}_2$ quantum channel: valley correlations and zigzag Wigner crystal
• Geometry effects in topologically confined bilayer graphene loops
• Probing valley phenomena with gate-defined valley splitters
• Ultra-Fast All-Electrical Universal Nano-Qubits
• Conductance of electrostatic wire junctions in bilayer graphene
• RFSoC-based radio-frequency reflectometry in gate-defined bilayer graphene quantum devices
• Electric field tunable spin-orbit gap in a bilayer graphene/WSe${}_2$ quantum dot
• Negative electronic compressibility in charge islands in twisted bilayer graphene
• Persistent currents in topological and trivial confinement in silicene
• The role of antisymmetric orbitals and electron-electron interactions on the two-particle spin and valley blockade in graphene double quantum dots
• Electronic properties of bilayer graphene with magnetic quantum structures studied using the Dirac equation
• Finite-Size Effects in the Dynamic Conductivity and Faraday Effect of Quantum Anomalous Hall Insulators
• Gate-defined single-electron transistors in twisted bilayer graphene
• Four-band effective square lattice model for Bernal-stacked bilayer graphene
• Nagaoka spin-valley ordering in silicene quantum dots
• Increasing the proximity induced spin-orbit coupling in bilayer graphene/WSe${}_2$ heterostructures with pressure
• Hexagonal boron nitride/bilayer graphene moiré superlattices in the Dirac-material family: energy-band engineering and carrier doping by dual gating
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