most citedExcited states in bilayer graphene quantum dots

95 citations · 95 across the 1 of their papers we have counts for

collaborators

7 papers

cond-mat.mes-hall2019

Real-time detection of every Auger recombination in a self-assembled quantum dot

Pia Lochner, Annika Kurzmann, Jens Kerski +6

Auger recombination is a non-radiative process, where the recombination energy of an electron-hole pair is transferred to a third charge carrier. It is a common effect in colloidal…

cond-mat.mes-hall2019

Tunable Valley Splitting due to Topological Orbital Magnetic Moment in Bilayer Graphene Quantum Point Contacts

Yongjin Lee, Angelika Knothe, Hiske Overweg +10

In multivalley semiconductors, the valley degree of freedom can be potentially used to store, manipulate and read quantum information, but its control remains challenging. The vall…

cond-mat.mes-hall2019

Fully automated identification of 2D material samples

Eliska Greplova, Carolin Gold, Benedikt Kratochwil +7

Thin nanomaterials are key constituents of modern quantum technologies and materials research. Identifying specimens of these materials with properties required for the development…

cond-mat.mes-hall2019

Large multi-directional spin-to-charge conversion in low symmetry semimetal MoTe at room temperature

C. K. Safeer, Nerea Ontoso, Josep Ingla-Aynés +11

Efficient and versatile spin-to-charge current conversion is crucial for the development of spintronic applications, which strongly rely on the ability to electrically generate and…

cond-mat.mes-hall201995 cited

Excited states in bilayer graphene quantum dots

A. Kurzmann, M. Eich, H. Overweg +11

We report on ground- and excited state transport through an electrostatically defined few-hole quantum dot in bilayer graphene in both parallel and perpendicular applied magnetic f…

cond-mat.mes-hall2019

Charge detection in gate-defined bilayer graphene quantum dots

A. Kurzmann, H. Overweg, M. Eich +8

We report on charge detection in electrostatically-defined quantum dot devices in bilayer graphene using an integrated charge detector. The device is fabricated without any etching…