activity
20142024
most citedSpin and Valley States in Gate-defined Bilayer Graphene Quantum Dots

128 citations · 1.5k across the 33 of their papers we have counts for

collaborators
Showing 2019Show all

8 papers · 1 filter

cond-mat.mes-hall2019★ 16 cited

Real-time detection of every Auger recombination in a self-assembled quantum dot

Pia Lochner, Annika Kurzmann, Jens Kerski +6

Auger recombination is a non-radiative process, where the recombination energy of an electron-hole pair is transferred to a third charge carrier. It is a common effect in colloidal…

cond-mat.mes-hall2019★ 64 cited

Gap Opening in Twisted Double Bilayer Graphene by Crystal fields

Peter Rickhaus, Giulia Zheng, Jose L. Lado +12

Crystal fields occur due to a potential difference between chemically different atomic species. In Van-der-Waals heterostructures such fields are naturally present perpendicular to…

cond-mat.mes-hall2019★ 74 cited

Tunable Valley Splitting due to Topological Orbital Magnetic Moment in Bilayer Graphene Quantum Point Contacts

Yongjin Lee, Angelika Knothe, Hiske Overweg +10

In multivalley semiconductors, the valley degree of freedom can be potentially used to store, manipulate and read quantum information, but its control remains challenging. The vall…

cond-mat.mes-hall2019★ 22 cited

Fully automated identification of 2D material samples

Eliska Greplova, Carolin Gold, Benedikt Kratochwil +7

Thin nanomaterials are key constituents of modern quantum technologies and materials research. Identifying specimens of these materials with properties required for the development…

cond-mat.mes-hall2019★ 123 cited

Large multi-directional spin-to-charge conversion in low symmetry semimetal MoTe at room temperature

C. K. Safeer, Nerea Ontoso, Josep Ingla-Aynés +11

Efficient and versatile spin-to-charge current conversion is crucial for the development of spintronic applications, which strongly rely on the ability to electrically generate and…

cond-mat.mes-hall2019★ 71 cited

The Electronic Thickness of Graphene

Peter Rickhaus, Ming-Hao Liu, Marcin Kurpas +10

The van-der-Waals stacking technique enables the fabrication of heterostructures, where two conducting layers are atomically close. In this case, the finite layer thickness matters…