Gate-Tunable Resonant Tunneling in Double Bilayer Graphene Heterostructures

Abstract

We demonstrate gate-tunable resonant tunneling and negative differential resistance in the interlayer current-voltage characteristics of rotationally aligned double bilayer graphene heterostructures separated by hexagonal boron-nitride (hBN) dielectric. An analysis of the heterostructure band alignment using individual layer densities, along with experimentally determined layer chemical potentials indicates that the resonance occurs when the energy bands of the two bilayer graphene are aligned. We discuss the tunneling resistance dependence on the interlayer hBN thickness, as well as the resonance width dependence on mobility and rotational alignment.

26 pages, 6 figures; supporting information includes one figure

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• Theory of resonant tunneling in bilayer-graphene/hexagonal-boron-nitride heterostructures
• Negative Differential Resistance in Carbon-Based Nanostructures
• Twist-controlled Resonant Tunnelling between Monolayer and Bilayer Graphene
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• Gate-versus defect-induced voltage drop and negative differential resistance in vertical graphene heterostructures
• Twisted monolayer and bilayer graphene for vertical tunneling transistors
• Multiple negative differential conductance regions and inelastic phonon assisted tunneling in graphene-hBN-graphene structures
• Emergence of Interlayer Coherence in Twist-Controlled Graphene Double Layers
• Interlayer Transport through a Graphene / Rotated-Boron-Nitride / Graphene Heterostructure
• Families of Gapped Interfaces Between Fractional Quantum Hall States
• Valley-polarised tunnelling currents in bilayer graphene tunnelling transistors
• Guided modes and terahertz transitions for two-dimensional Dirac fermions in a smooth double-well potential
• Inter-ribbon tunneling in graphene: an atomistic Bardeen approach
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• Substitutional mechanism for growth of hexagonal boron nitride on epitaxial graphene
• Chiral properties of graphene h-BN hybrid systems
• Characteristics of Interlayer Tunneling Field Effect Transistors Computed by a "DFT-Bardeen" Method
• Negative differential resistance in Van der Waals heterostructures due to moiré-induced spectral reconstruction
• Magnitude of the Current in Two-Dimensional Interlayer Tunneling Devices
• Canted antiferromagnetism and excitonic order in gated double-layer graphene
• Mode-selective cloaking and phase-matching cavity resonances in bilayer graphene transport
• Probing the features of electron dispersion by tunneling between slightly twisted bilayer graphene sheets
• Mode-Resolved Multiband Ballistic Transport and Conductance Thresholds in Bilayer Graphene Junctions
• Theory of Tunneling between Two-Dimensional Electron Layers Driven by Spin Pumping: Adiabatic Regime and Beyond