Tunable spin-selective loading of a silicon spin qubit

Abstract

The remarkable properties of silicon have made it the central material for the fabrication of current microelectronic devices. Silicon's fundamental properties also make it an attractive option for the development of devices for spintronics and quantum information processing. The ability to manipulate and measure spins of single electrons is crucial for these applications. Here we report the manipulation and measurement of a single spin in a quantum dot fabricated in a silicon/silicon-germanium heterostructure. We demonstrate that the rate of loading of electrons into the device can be tuned over an order of magnitude using a gate voltage, that the spin state of the loaded electron depends systematically on the loading voltage level, and that this tunability arises because electron spins can be loaded through excited orbital states of the quantum dot. The longitudinal spin relaxation time T1 is measured using single-shot pulsed techniques and found to be ~3 seconds at a field of 1.85 Tesla. The demonstration of single spin measurement as well as a long spin relaxation time and tunability of the loading are all favorable properties for spintronics and quantum information processing applications.

4 pages, 3 figures, Supplemental Information

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• Single-shot read-out of an individual electron spin in a quantum dot
• Driven coherent oscillations of a single electron spin in a quantum dot
• Electronic measurement and control of spin transport in Silicon
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• Fast tunnel rates in Si/SiGe one-electron single and double quantum dots
• Spin relaxation in quantum dots due to electron exchange with leads
• Lifetime measurements (T1) of electron spins in Si/SiGe quantum dots
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Cited by in corpus (99)

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