Spin filling and orbital structure of the first six holes in a silicon metal-oxide-semiconductor quantum dot

Abstract

The spin states of electrons confined in semiconductor quantum dots form a promising platform for quantum computation. Recent studies of silicon CMOS qubits have shown coherent manipulation of electron spin states with extremely high fidelity. However, manipulation of single electron spins requires large oscillatory magnetic fields to be generated on-chip, making it difficult to address individual qubits when scaling up to multi-qubit devices. The spin-orbit interaction allows spin states to be controlled with electric fields, which act locally and are easier to generate. While the spin-orbit interaction is weak for electrons in silicon, valence band holes have an inherently strong spin-orbit interaction. However, creating silicon quantum dots in which a single hole can be localised, in an architecture that is suitable for scale-up to a large number of qubits, is a challenge. Here we report a silicon quantum dot, with an integrated charge sensor, that can be operated down to the last hole. We map the spin states and orbital structure of the first six holes, and show they follow the Fock-Darwin spectrum. We also find that hole-hole interactions are extremely strong, reducing the two-hole singlet-triplet splitting by 90% compared to the single particle level spacing of 3.5 meV. These results provide a route to single hole spin quantum bits in a planar silicon CMOS architecture.

arXiv comment7 pages, 3 figures

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• Theory of Hole-Spin Qubits in Strained Germanium Quantum Dots
• Optimal operation points for ultrafast, highly coherent Ge hole spin-orbit qubits
• Recent advances in hole-spin qubits
• Generating a topological anomalous Hall effect in a non-magnetic conductor
• Electrical control of the $g$-tensor of a single hole in a silicon MOS quantum dot
• Spin relaxation benchmarks and individual qubit addressability for holes in quantum dots
• A two-dimensional array of single-hole quantum dots
• Electrical operation of planar Ge hole spin qubits in an in-plane magnetic field
• Quantum control of hole spin qubits in double quantum dots
• Ambipolar quantum dots in undoped silicon fin field-effect transistors
• A singlet-triplet hole-spin qubit in MOS silicon
• Bell-state tomography in a silicon many-electron artificial molecule
• Charge-noise induced dephasing in silicon hole-spin qubits
• Spectroscopy of Quantum-Dot Orbitals with In-Plane Magnetic Fields
• Electrical operation of hole spin qubits in planar MOS silicon quantum dots
• Anisotropic $g$-tensors in hole quantum dots: The role of the transverse confinement direction
• Tunable interdot coupling in few-electron bilayer graphene double quantum dots
• Gate-tunable Electronic Transport in p-type GaSb Quantum Wells
• A two-dimensional 10-qubit array in germanium with robust and localised qubit control
• Single-charge occupation in ambipolar quantum dots
• Signatures of quantum mechanical Zeeman effect in classical transport due to topological properties of two-dimensional spin-3/2 holes
• Non-linear anomalous Hall effect of two-dimensional spin-3/2 heavy holes
• Combining n-MOS Charge Sensing with p-MOS Silicon Hole Double Quantum Dots in a CMOS platform
• Effective out-of-plane g-factor in strained-Ge/SiGe quantum dots
• Robust entangling gate for capacitively coupled few-electron singlet-triplet qubits
• Leveraging Off-the-Shelf Silicon Chips for Quantum Computing
• Gate-based spin readout of hole quantum dots with site-dependent $g-$factors
• Berry-phase induced entanglement of hole-spin qubits in a microwave cavity
• Measurement of enhanced spin-orbit coupling strength for donor-bound electron spins in silicon
• Quantification of the heavy-hole--light-hole mixing in two-dimensional hole gases
• Giant Rabi frequencies between qubit and excited hole states in silicon quantum dots
• Micromagnet-free operation of electron spin qubits in Si/Si${}_{1-x}$Ge${}_x$ vertical double quantum dots
• Disentangling orbital and confinement contributions to $g$-factor in Ge/SiGe hole quantum dots
• Anomalous zero-field splitting for hole spin qubits in Si and Ge quantum dots