High-efficiency generation of nanoscale single silicon vacancy defect array in silicon carbide

Abstract

Color centers in silicon carbide have increasingly attracted attention in recent years owing to their excellent properties such as single photon emission, good photostability, and long spin coherence time even at room temperature. As compared to diamond which is widely used for holding Nitrogen-vacancy centers, SiC has the advantage in terms of large-scale, high-quality and low cost growth, as well as advanced fabrication technique in optoelectronics, leading to the prospects for large scale quantum engineering. In this paper, we report experimental demonstration of the generation of nanoscale $V_{Si}$ single defect array through ion implantation without the need of annealing. $V_{Si}$ defects are generated in pre-determined locations with resolution of tens of nanometers. This can help in integrating $V_{Si}$ defects with the photonic structures which, in turn, can improve the emission and collection efficiency of $V_{Si}$ defects when it is used in spin photonic quantum network. On the other hand, the defects are shallow and they are generated $\sim 40nm$ below the surface which can serve as critical resources in quantum sensing application.

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• Coherent control of nitrogen-vacancy center spins in silicon carbide at room temperature
• Bright room temperature single photon source at telecom range in cubic silicon carbide
• Selective Purcell enhancement of two closely linked zero-phonon transitions of a silicon carbide color center
• Deterministic generation of all-photonic quantum repeaters from solid-state emitters
• Coherent electrical readout of defect spins in 4H-SiC by photo-ionization at ambient conditions
• Influence of irradiation on defect spin coherence in silicon carbide
• Coherent control of defect spins in silicon carbide above 550 K
• Generating stable spin squeezing by squeezed-reservoir engineering
• Novel color center platforms enabling fundamental scientific discovery
• Wide bandgap semiconductors for radiation detection: A review
• Quantum Information Processing With Integrated Silicon Carbide Photonics
• Phononic waveguide assisted steady state entanglement of SiV centers
• Enhanced cavity coupling to silicon monovacancies in 4-H Silicon Carbide using below bandgap laser irradiation and low temperature thermal annealing
• Simulation of topological phases with color center arrays in phononic crystals
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• Exhaustive characterization of modified Si vacancies in 4H-SiC
• Optimization of the power broadening in optically detected magnetic resonance of defect spins in silicon carbide
• Experimental characterization of spin-3/2 silicon vacancy centers in 6H-SiC
• Versatile Direct Writing of Dopants in a Solid State Host Through Recoil Implantation
• Electrically active defects in 3C, 4H and 6H silicon carbide polytypes: A review
• Maskless Generation of Single Silicon Vacancy Arrays in Silicon Carbide by a Focused He+ Ion Beam
• M-center in low-energy electron irradiated 4H-SiC
• Theoretical Investigation of Charge Transfer Between Two Defects in a Wide-Bandgap Semiconductor
• Fluorescence enhancement of single V2 centers in a 4H-SiC cavity antenna
• Generation of entangled photons with a second-order nonlinear photonic crystal and a beam splitter
• Quantum computation in silicon-vacancy centers based on nonadiabatic geometric gates protected by dynamical decoupling
• Hybrid nanophotonic-nanomagnonic SiC-YiG quantum sensor: I/ theoretical design and properties
• A QM/MM equation-of-motion coupled-cluster approach for predicting semiconductor color-center structure and emission frequencies
• Assessing the potential of perfect screw dislocations in SiC for solid-state quantum technologies
• Quantum router of silicon-vacancy centers via a diamond waveguide