Electron-electron interaction correction and magnetoresistance in tilted fields in Si-based 2D systems

Abstract

We study diffusive electron-electron interaction correction to conductivity by analyzing simultaneously ${\rho }_{xx}$ and ${\rho }_{xy}$ for disordered 2D electron systems in Si in tilted magnetic field. Tilting the field is shown to be a straightforward tool to disentangle spin and orbital effects. In particular, by changing the tilt angle we prove experimentally that in the field range $g{\mu }_{B}B>k_{B}T$ the correction depends on modulus of magnetic field rather than on its direction, which is expected for a system with isotropic $g$-factor. In the high-field limit the correction behaves as $\ln (B)$, as expected theoretically (Lee, Ramakrishnan, Phys. Rev. B{\bf 26}, 4009 (1982)). Our data prove that the diffusive electron-electron interaction correction to conductivity is not solely responsible for the huge and temperature dependent magnetoresistance in parallel field, typically observed in Si-MOSFETs.

12 pages, 7 figures

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• Spin polarization and exchange-correlation effects in transport properties of two-dimensional electron systems in silicon
• Two dimensional electrons in (100) oriented silicon field effect structures in the region of low concentrations and high mobilities
• Electron-Electron Interactions in 2D Semiconductor InSe
• Unraveling the Effect of Electron-Electron Interaction on Electronic Transport in High-Mobility Stannate Films
• Measurements of the magnetic properties of conduction electrons
• Simple mechanism that breaks the Hall effect linearity at low temperatures
• Temperature dependent nonlinear Hall effect in macroscopic Si-MOS antidot array
• Transport anisotropy in Ge quantum wells in the absence of quantum oscillations
• Multi-band character revealed from Weak-antilocalization effect in Platinum thin films
• Resistance asymmetry of a two-dimensional electron gas caused by an effective spin injection
• Dimensionality-dependent type-II Weyl semimetal state in Mo${}_{0.25}$W${}_{0.75}$Te${}_2$