Unraveling the Effect of Electron-Electron Interaction on Electronic Transport in High-Mobility Stannate Films

Abstract

Contrary to the common belief that electron-electron interaction (EEI) should be negligible in s-orbital-based conductors, we demonstrated that the EEI effect could play a significant role on electronic transport leading to the misinterpretation of the Hall data. We show that the EEI effect is primarily responsible for an increase in the Hall coefficient in the La-doped SrSnO3 films below 50 K accompanied by an increase in the sheet resistance. The quantitative analysis of the magnetoresistance (MR) data yielded a large phase coherence length of electrons exceeding 450 nm at 1.8 K and revealed the electron-electron interaction being accountable for breaking of electron phase coherency in La-doped SrSnO3 films. These results while providing critical insights into the fundamental transport behavior in doped stannates also indicate the potential applications of stannates in quantum coherent electronic devices owing to their large phase coherence length.

arXiv comment3 figures

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• Physical properties of transparent perovskite oxides (Ba,La)SnO3 with high electrical mobility at room temperature
• Electron-electron interactions in the conductivity of graphene
• Weak localization and electron-electron interactions in Indium-doped ZnO nanowires
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Cited by in corpus (2)

• Dopant Solubility, and Charge Compensation in La-doped SrSnO3 Films
• Hysteretic Magnetoresistance in a Non-Magnetic SrSnO3 Film via Thermal Coupling to Dynamic Substrate Behavior