Weak localization and electron-electron interactions in Indium-doped ZnO nanowires

Abstract

Single crystal ZnO nanowires doped with indium are synthesized via the laser-assisted chemical vapor deposition method. The conductivity of the nanowires is measured at low temperatures in magnetic fields both perpendicular and parallel to the wire axes. A quantitative fit of our data is obtained, consistent with the theory of a quasi-one-dimensional metallic system with quantum corrections due to weak localization and electron-electron interactions. The anisotropy of the magneto-conductivity agrees with theory. The two quantum corrections are of approximately equal magnitude with respective temperature dependences of T^-1/3 and T^-1/2. The alternative model of quasi-two-dimensional surface conductivity is excluded by the absence of oscillations in the magneto-conductivity in parallel magnetic fields.

13 pages, Corrected format

References in corpus (1)

• One-dimensional Weak Localization of Electrons in a Single InAs Nanowire

Cited by in corpus (7)

• Anisotropic Magneto-conductance of InAs Nanowire: Angle Dependent Suppression of 1D Weak Localization
• Coulomb Oscillations of Indium-doped ZnO Nanowire Transistors in a Magnetic Field
• Unraveling the Effect of Electron-Electron Interaction on Electronic Transport in High-Mobility Stannate Films
• Competing weak localization and weak antilocalization in amorphous indium-gallium-zinc-oxide thin-film transistors
• Quantum-interference transport through surface layers of indium-doped ZnO nanowires
• Weak Localization and Weak Antilocalization in Double-Gate a-InGaZnO Thin-Film Transistors
• Universal dependence on the channel conductivity of the competing weak localization and antilocalization in amorphous InGaZnO${}_4$ thin-film transistors