Weak Localization and Weak Antilocalization in Double-Gate a-InGaZnO Thin-Film Transistors

Abstract

We demonstrate manipulation of quantum interference by controlling the competitions between weak localization (WL) and weak antilocalization (WAL) via variation of the gate voltages of double- gate amorphous InGaZnO thin-film transistors. Our study unveils the full profile of an intriguing universal dependence of the respective WL and WAL contributions on the channel conductivity. This universality is discovered to be robust against interface disorder.

to appear in IEEE Electron Device Letters

References in corpus (4)

• Coulomb Oscillations of Indium-doped ZnO Nanowire Transistors in a Magnetic Field
• Competing weak localization and weak antilocalization in amorphous indium-gallium-zinc-oxide thin-film transistors
• Quantum-interference transport through surface layers of indium-doped ZnO nanowires
• Universal dependence on the channel conductivity of the competing weak localization and antilocalization in amorphous InGaZnO${}_4$ thin-film transistors