activity
20162021
most citedCompeting weak localization and weak antilocalization in amorphous indium-gallium-zinc-oxide thin-film transistors

9 citations · 22 across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.mes-hall2021★ 6 cited

Dynamic Behaviors and Training Effects in TiN/Ti/HfO/TiN Nanolayered Memristors with Controllable Quantized Conductance States: Implications for Quantum and Neuromorphic Computing Devices

Min-Hsuan Peng, Ching-Yang Pan, Hao-Xuan Zheng +2

Controllable quantized conductance states of TiN/Ti/HfO/TiN memristors are realized with great precision through a pulse-mode reset procedure, assisted with analytical differen…

cond-mat.mes-hall2017★ 5 cited

Weak Localization and Weak Antilocalization in Double-Gate a-InGaZnO Thin-Film Transistors

Wei-Hsiang Wang, Elica Heredia, Syue-Ru Lyu +4

We demonstrate manipulation of quantum interference by controlling the competitions between weak localization (WL) and weak antilocalization (WAL) via variation of the gate voltage…

cond-mat.mes-hall2017★ 2 cited

Universal dependence on the channel conductivity of the competing weak localization and antilocalization in amorphous InGaZnO thin-film transistors

Wei-Hsiang Wang, Syue-Ru Lyu, Elica Heredia +4

We investigate the gate-voltage dependence of the magnetoconductivity of several amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs). The magnetoconductivity exhibits gate-…

cond-mat.mes-hall2017★ 9 cited

Competing weak localization and weak antilocalization in amorphous indium-gallium-zinc-oxide thin-film transistors

Wei-Hsiang Wang, Syue-Ru Lyu, Elica Heredia +5

We have investigated the gate-voltage dependence and the temperature dependence of the magnetoconductivity of amorphous indium-gallium-zinc-oxide thin-film transistors. A weak-loca…

cond-mat.mtrl-sci2016

Monolithic Integration of AlGaAs Distributed Bragg Reflectors on Virtual Ge Substrates via Aspect Ratio Trapping

Yiheng Lin, Wei Shi, Jizhong Li +8

High quality AlxGa1-xAs distributed Bragg reflectors (DBRs) were successfully monolithically grown on on-axis Si (100) substrates via a Ge layer formed by aspect ratio trapping (AR…