Competing weak localization and weak antilocalization in amorphous indium-gallium-zinc-oxide thin-film transistors

Abstract

We have investigated the gate-voltage dependence and the temperature dependence of the magnetoconductivity of amorphous indium-gallium-zinc-oxide thin-film transistors. A weak-localization feature is observed at small magnetic fields on top of an overall negative magnetoconductivity at higher fields. An intriguing controllable competition between weak localization and weak antilocalization is observed by tuning the gate voltage or varying the temperature. Our findings reflect controllable quantum interference competition in the electron systems in amorphous indium-gallium-zinc-oxide thin-film transistors.

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• Dephasing of Electrons in Mesoscopic Metal Wires
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Cited by in corpus (3)

• Crossover Between Weak Antilocalization and Weak Localization and Electron-Electron Interaction in Few-Layer WTe${}_2$
• Weak Localization and Weak Antilocalization in Double-Gate a-InGaZnO Thin-Film Transistors
• Universal dependence on the channel conductivity of the competing weak localization and antilocalization in amorphous InGaZnO${}_4$ thin-film transistors