Highly enhanced Curie temperatures in low temperature annealed (Ga,Mn)As epilayers

Abstract

We report Curie temperatures up to 150 K in annealed Ga1-xMnxAs epilayers grown with a relatively low As:Ga beam equivalent pressure ratio. A variety of measurements (magnetization, Hall effect, magnetic circular dichroism and Raman scattering) show that the higher ferromagnetic transition temperature results from an enhanced free hole density. The data also indicate that, in addition to the carrier concentration, the sample thickness limits the maximum attainable Curie temperature in this material - suggesting that the free surface of Ga1-xMnxAs epilayers is important in determining their physical properties.

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References in corpus (8)

• Effects of annealing time on defect-controlled ferromagnetism in Ga1-xMnxAs
• High Curie temperature GaMnAs obtained by resistance-monitored annealing
• Self-compensation in manganese-doped ferromagnetic semiconductors
• Saturated Ferromagnetism and Magnetization Deficit in Optimally Annealed (Ga,Mn)As Epilayers
• Curie Temperature Trends in (III,Mn)V Ferromagnetic Semiconductors
• Phase Diagram of a Model for Diluted Magnetic Semiconductors Beyond Mean-Field Approximations
• Spectroscopic determination of hole density in the ferromagnetic semiconductor Ga${}_{1-x}$Mn${}_x$As
• Dependence of Curie Temperature on the Thickness of Epitaxial (Ga,Mn)As Film

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