Dependence of Curie Temperature on the Thickness of Epitaxial (Ga,Mn)As Film

Abstract

We present the magnetotransport properties of very thin (5 to 15 nm) single (Ga,Mn)As layers grown by low temperature molecular beam epitaxy. A lower (Ga,Mn)As thickness limit of 5 nm for the ferromagnetic phase and the dependence of the Curie temperature on (Ga,Mn)As thickness are determined from electrical transport measurements. The Curie temperature is determined to be 97 K for the thinnest ferromagnetic sample and is found to decrease for increasing layer thickness. A carrier density of ~7.1$\times 10^{20}$ cm${}^{-3}$ for the 5 nm thick (Ga,Mn)As layer is determined from Hall measurements. Differences between magnetotransport properties of thick and thin (Ga,Mn)As layers are observed and discussed.

arXiv comment6 pages, 4 figures

References in corpus (5)

• Ferromagnetic semiconductors
• Effects of annealing time on defect-controlled ferromagnetism in Ga1-xMnxAs
• Saturated Ferromagnetism and Magnetization Deficit in Optimally Annealed (Ga,Mn)As Epilayers
• Ferromagnetism and Canted Spin Phase in AlAs/GaMnAs Single Quantum Wells: Monte Carlo Simulation
• Ferromagnetic GaMnAs/GaAs superlattices - MBE growth and magnetic properties

Cited by in corpus (8)

• Highly enhanced Curie temperatures in low temperature annealed (Ga,Mn)As epilayers
• Experimental probing of the interplay between ferromagnetism and localisation in (Ga,Mn)As
• Curie temperature versus hole concentration in field-effect structures of Ga1-xMnxAs
• Capping-induced suppression of annealing in Ga(1-x)Mn(x)As epilayers
• Effect of annealing on carrier density and Curie temperature in epitaxial (Ga,Mn)As thin films
• Indirect exchange in GaMnAs bilayers via spin-polarized inhomogeneous hole gas: Monte Carlo simulation
• Magnetization of ultrathin (Ga,Mn)As layers
• Photoemission studies of the annealing induced modifications of (Ga,Mn)As