Indirect exchange in GaMnAs bilayers via spin-polarized inhomogeneous hole gas: Monte Carlo simulation
arXiv:cond-mat/0212484 · doi:10.1103/PhysRevB.68.085319
Abstract
The magnetic order resulting from an indirect exchange between magnetic moments provided by spin-polarized hole gas in the metallic phase of a GaMnAs double layer structure is studied via Monte Carlo simulation. The coupling mechanism involves a perturbative calculation in second order of the interaction between the magnetic moments and carriers (holes). We take into account a possible polarization of the hole gas due to the existence of an average magnetization in the magnetic layers, establishing, in this way, a self-consistency between the magnetic order and the electronic structure. That interaction leads to an internal ferromagnetic order inside each layer, and a parallel arrangement between their magnetizations, even in the case of thin layers. This fact is analyzed in terms of the inter- and intra-layer interactions.
arXiv comment17 pages and 14 figures
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Cited by in corpus (10)
- Interlayer Exchange Coupling in (Ga,Mn)As-based Superlattices
- In search of antiferromagnetic interlayer coupling in diluted magnetic thin films with RKKY interaction
- Charge and spin distributions in GaMnAs/GaAs Ferromagnetic Multilayers
- Modulation of the Curie Temperature in Ferromagnetic/Ferroelectric Hybrid Double Quantum Wells
- Impurity bands and the character of the electronic states in ferromagnetic GaMnAs layers
- A semiquantitative approach to the impurity-band-related transport properties of GaMnAs nanolayers
- Metal-insulator transition induced by fluctuations of the magnetic potential in semiconductors with magnetic impurities
- Spin-polarized transport in ferromagnetic multilayered semiconductor nanostructures
- Magnetic properties of nanosized diluted magnetic semiconductors with band splitting
- High-temperature spin polarization of high-mobility charge carriers in hybrid metal-semiconductor structures