Photoemission studies of the annealing induced modifications of (Ga,Mn)As

Abstract

Using angle resolved photoemission we have investigated annealing-induced changes in Ga(1-x)Mn(x)As with x = 0.05. We find that the position of the Fermi energy is a function of annealing time and temperature. It is also established that the Curie temperature is strongly correlated to the separation between the Fermi level and the valence band maximum. Valence band photoemission shows that the Mn3d spectrum is modified by the annealing treatments

arXiv comment4 pages, 5 figures

References in corpus (4)

• Effects of annealing time on defect-controlled ferromagnetism in Ga1-xMnxAs
• Highly enhanced Curie temperatures in low temperature annealed (Ga,Mn)As epilayers
• Photoemission studies of Ga${}_{1-x}$Mn${}_x$As: Mn-concentration dependent properties
• Dependence of Curie Temperature on the Thickness of Epitaxial (Ga,Mn)As Film

Cited by in corpus (5)

• Enhanced annealing, high Curie temperature and low-voltage gating in (Ga,Mn)As: A surface oxide control study
• Electron correlations in Mn${}_x$Ga${}_{1-x}$As as seen by resonant electron spectroscopy and dynamical mean field theory
• Electronic structure of (Ga,Mn)As revisited
• Effects of non-uniform Mn distribution in (Ga,Mn)As
• Formation of Epitaxial MnBi Layers on (Ga,Mn)As