53 citations · 102 across the 7 of their papers we have counts for
7 papers
Formation of Epitaxial MnBi Layers on (Ga,Mn)As
J. Adell, M. Adell, I. Ulfat +3
The initial growth of MnBi on MnAs terminated (GaMn)As is studied by means of synchrotron based photoelectron spectroscopy. From analysis of surface core level shifts we conclude t…
High ferromagnetic phase transition temperatures in GaMnAs layers annealed under arsenic capping
J. Sadowski, J. Z. Domagala, V. Osinniy +7
Thin GaMnAs layers grown by molecular beam epitaxy were subjected to low-temperature post growth annealing, with an amorphous arsenic capping layer deposited on the GaMnAs surface…
Influence of annealing parameters on the ferromagnetic properties of optimally passivated (Ga,Mn)As epilayers
V. Stanciu, O. Wilhelmsson, U. Bexell +5
The influence of annealing parameters - temperature and time - on the magnetic properties of As-capped (Ga,Mn)As epitaxial thin films have been investigated. The dependence of the…
Solid phase epitaxy of ferromagnetic MnAs dots on GaMnAs layers
J. Sadowski, M. Adell, J. Kanski +6
Formation of MnAs quantum dots in a regular ring-like distribution has been found on MBE-grown (GaMn)As surfaces after low-temperature annealing under As capping. The Mn was suppli…
Comment on "Mn Interstitial Diffusion in (Ga,Mn)As"
M. Adell, J. Kanski, L. Ilver +2
The magnetic and transport properties of (GaMn)As are known to be influenced by postgrowth annealing, and it is generally accepted that these modifications are due to outdiffusion…
Post-growth annealing of GaMnAs under As capping - an alternative way to increase Tc
M. Adell, V. Stanciu, J. Kanski +7
We demonstrate that in situ post-growth annealing of GaMnAs layers under As capping is adequate for achieving high Curie temperatures (Tc) in a similar way as ex situ annealing in…