Post-growth annealing of GaMnAs under As capping - an alternative way to increase Tc

Abstract

We demonstrate that in situ post-growth annealing of GaMnAs layers under As capping is adequate for achieving high Curie temperatures (Tc) in a similar way as ex situ annealing in air or in N2 atmosphere practiced earlier.

13 pages, 4 figures

References in corpus (12)

• Mn Interstitial Diffusion in (Ga,Mn)As
• Effects of annealing time on defect-controlled ferromagnetism in Ga1-xMnxAs
• Highly enhanced Curie temperatures in low temperature annealed (Ga,Mn)As epilayers
• Can half metallic zincblende MnAs be grown?
• Spin interactions of interstitial Mn ions in ferromagnetic GaMnAs
• Fundamental Curie temperature limit in ferromagnetic GaMnAs
• Lattice constant in diluted magnetic semiconductors (Ga,Mn)As
• Influence of defects on the lattice constant of GaMnAs
• Annealing-Dependent Magnetic Depth Profile in Ga[1-x]Mn[x]As
• Capping-induced suppression of annealing in Ga(1-x)Mn(x)As epilayers
• Effect of annealing on carrier density and Curie temperature in epitaxial (Ga,Mn)As thin films
• Independent Electronic and Magnetic Doping in (Ga,Mn)As Based Digital Ferromagnetic Heterostructures

Cited by in corpus (7)

• Cubic anisotropy in high homogeneity thin (Ga,Mn)As layers
• Influence of annealing parameters on the ferromagnetic properties of optimally passivated (Ga,Mn)As epilayers
• Hydrostatic pressure study of paramagnetic-ferromagnetic phase transition in (Ga,Mn)As
• Effect of low-temperature annealing on the electronic- and band-structure of (Ga,Mn)As epitaxial layers
• Structural and optical properties of self-catalytic GaAs:Mn nanowires grown by molecular beam epitaxy on silicon substrates
• Annealing-induced changes of the magnetic anisotropy of (Ga,Mn)As epilayers
• Formation of Epitaxial MnBi Layers on (Ga,Mn)As