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cond-mat.mtrl-sci2004
Comment on "Mn Interstitial Diffusion in (Ga,Mn)As"
M. Adell, J. Kanski, L. Ilver +2
The magnetic and transport properties of (GaMn)As are known to be influenced by postgrowth annealing, and it is generally accepted that these modifications are due to outdiffusion…
cond-mat.other2004
Post-growth annealing of GaMnAs under As capping - an alternative way to increase Tc
M. Adell, V. Stanciu, J. Kanski +7
We demonstrate that in situ post-growth annealing of GaMnAs layers under As capping is adequate for achieving high Curie temperatures (Tc) in a similar way as ex situ annealing in…
cond-mat.mtrl-sci2004
Photoemission studies of the annealing induced modifications of (Ga,Mn)As
M. Adell, L. Ilver, J. Kanski +2
Using angle resolved photoemission we have investigated annealing-induced changes in Ga(1-x)Mn(x)As with x = 0.05. We find that the position of the Fermi energy is a function of an…