Carrier-mediated ferromagnetic ordering in Mn ion-implanted p+GaAs:C

Abstract

Highly p-type GaAs:C was ion-implanted with Mn at differing doses to produce Mn concentrations in the 1 - 5 at.% range. In comparison to LT-GaAs and n+GaAs:Si samples implanted under the same conditions, transport and magnetic properties show marked differences. Transport measurements show anomalies, consistent with observed magnetic properties and with epi- LT-(Ga,Mn)As, as well as the extraordinary Hall Effect up to the observed magnetic ordering temperature (T_C). Mn ion-implanted p+GaAs:C with as-grown carrier concentrations > 10^20 cm^-3 show remanent magnetization up to 280 K.

References in corpus (9)

• Anomalous Hall effect in ferromagnetic semiconductors
• Polaron percolation in diluted magnetic semiconductors
• Effects of Disorder on Ferromagnetism in Diluted Magnetic Semiconductors
• Effects of annealing time on defect-controlled ferromagnetism in Ga1-xMnxAs
• High Curie temperature GaMnAs obtained by resistance-monitored annealing
• Highly enhanced Curie temperatures in low temperature annealed (Ga,Mn)As epilayers
• Carrier-induced ferromagnetism in p-Zn1-xMnxTe
• Unconventional carrier-mediated ferromagnetism above room temperature in ion-implanted (Ga, Mn)P:C
• Curie Temperature Trends in (III,Mn)V Ferromagnetic Semiconductors

Cited by in corpus (6)

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• Enhancing $T_c$ in ferromagnetic semiconductors
• Evidence of metallic clustering in annealed Ga1-xMnxAs from atypical scaling behavior of the anomalous Hall coefficient
• Absence of halfmetallicity in defect-free Cr, Mn-delta-doped Digital Magnetic Heterostructures