117 citations · 344 across the 7 of their papers we have counts for
7 papers
Surface versus bulk characterization of the electronic inhomogeneity in a VO_{2} film
Y. J. Chang, J. S. Yang, Y. S. Kim +6
We investigated the inhomogeneous electronic properties at the surface and interior of VO_{2} thin films that exhibit a strong first-order metal-insulator transition (MIT). Using t…
Observation of inhomogeneous domain nucleation in epitaxial Pb(Zr,Ti)O3 capacitors
D. J. Kim, J. Y. Jo, T. H. Kim +4
We investigated domain nucleation process in epitaxial Pb(Zr,Ti)O3 capacitors under a modified piezoresponse force microscope. We obtained domain evolution images during polarizati…
Coercive fields in ultrathin BaTiO3 capacitors
J. Y. Jo, Y. S. Kim, T. W. Noh +2
Thickness-dependence of coercive field (EC) was investigated in ultrathin BaTiO3 capacitors with thicknesses (d) between 30 and 5 nm. The EC appears nearly independent of d below 1…
Interplay between carrier and impurity concentrations in annealed GaMnAs intrinsic anomalous Hall Effect
S. H. Chun, Y. S. Kim, H. K. Choi +8
Investigating the scaling behavior of annealed GaMnAs anomalous Hall coefficients, we note a universal crossover regime where the scaling behavior changes from quadra…
Evidence of metallic clustering in annealed Ga1-xMnxAs from atypical scaling behavior of the anomalous Hall coefficient
H. K. Choi, W. O. Lee, Y. S. OH +9
We report on the anomalous Hall coefficient and longitudinal resistivity scaling relationships on a series of annealed Ga1-xMnxAs epilayers (x~0.055). As-grown samples exhibit scal…
Carrier-mediated ferromagnetic ordering in Mn ion-implanted p+GaAs:C
Y. D. Park, J. D. Lim, K. S. Suh +7
Highly p-type GaAs:C was ion-implanted with Mn at differing doses to produce Mn concentrations in the 1 - 5 at.% range. In comparison to LT-GaAs and n+GaAs:Si samples implanted und…