Carrier-mediated ferromagnetic ordering in Mn ion-implanted p+GaAs:C

Y. D. Park, J. D. Lim, K. S. Suh +7

Highly p-type GaAs:C was ion-implanted with Mn at differing doses to produce Mn concentrations in the 1 - 5 at.% range. In comparison to LT-GaAs and n+GaAs:Si samples implanted und…