Vector magnetometry using silicon vacancies in 4H-SiC at ambient conditions

Abstract

Point defects in solids promise precise measurements of various quantities. Especially magnetic field sensing using the spin of point defects has been of great interest recently. When optical readout of spin states is used, point defects achieve optical magnetic imaging with high spatial resolution at ambient conditions. Here, we demonstrate that genuine optical vector magnetometry can be realized using the silicon vacancy in SiC, which has an uncommon S=3/2 spin. To this end, we develop and experimentally test sensing protocols based on a reference field approach combined with multi frequency spin excitation. Our works suggest that the silicon vacancy in an industry-friendly platform, SiC, has potential for various magnetometry applications at ambient conditions.

References in corpus (29)

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• Electron Spin Decoherence in Silicon Carbide Nuclear Spin Bath
• Spin Coherence and Echo Modulation of the Silicon Vacancy in 4H-SiC at Room Temperature
• Enhanced metrology using preferential orientation of nitrogen-vacancy centers in diamond
• High precision vector magnetometry with uniaxial quantum centers in silicon carbide
• Magnetometry with nitrogen-vacancy ensembles in diamond based on infrared absorption in a doubly resonant optical cavity
• Optically addressable silicon vacancy-related spin centers in rhombic silicon carbide with high breakdown characteristics and ENDOR evidence of their structure
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Cited by in corpus (33)

• High-fidelity spin and optical control of single silicon vacancy centres in silicon carbide
• Simultaneous Broadband Vector Magnetometry Using Solid-State Spins
• Scalable Quantum Photonics with Single Color Centers in Silicon Carbide
• Quantum properties of dichroic silicon vacancies in silicon carbide
• Precision Magnetometers for Aerospace Applications
• Identification of Si-vacancy related room temperature qubits in 4H silicon carbide
• Excitation and coherent control of spin qudit modes with sub-MHz spectral resolution
• Electrical charge state manipulation of single silicon vacancies in a silicon carbide quantum optoelectronic device
• Coherent electrical readout of defect spins in 4H-SiC by photo-ionization at ambient conditions
• Spin and optical properties of silicon vacancies in silicon carbide (a review)
• Scalable fabrication of single silicon vacancy defect arrays in silicon carbide using focused ion beam
• Excitation properties of the divacancy in 4H-SiC
• Spectrally stable defect qubits with no inversion symmetry for robust spin-to-photon interface
• Influence of irradiation on defect spin coherence in silicon carbide
• Coherent control of defect spins in silicon carbide above 550 K
• DC Magnetometry at the $T_2$ Limit
• Local vibrational modes of Si vacancy spin qubits in SiC
• nanoTesla magnetometry with the silicon vacancy in silicon carbide
• Spin polarization through Intersystem Crossing in the silicon vacancy of silicon carbide
• Adaptive tracking of a time-varying field with a quantum sensor
• Optimization of the power broadening in optically detected magnetic resonance of defect spins in silicon carbide
• Maskless Generation of Single Silicon Vacancy Arrays in Silicon Carbide by a Focused He+ Ion Beam
• Identification of silicon vacancy-related electron paramagnetic resonance centers in 4H SiC
• Quantum sensing with duplex qubits of silicon vacancy centers in SiC at room temperature
• Fiber-integrated silicon carbide silicon vacancy-based magnetometer
• Relaxation dynamics of spin 3/2 silicon vacancies in 4H-Silicon carbide
• Site-dependent properties of quantum emitters in nanostructured silicon carbide
• Low-field microwave-free sensors using dipolar spin relaxation of quartet spin states in silicon carbide
• Photo-luminescence properties of ion implanted Er3+-defects in 4H-SiCOI towards integrated quantum photonics
• Scalable registration of single quantum emitters within solid immersion lenses through femtosecond laser writing
• On the experimental properties of the TS defect in 4H-SiC
• Bias-field-free operation of nitrogen-vacancy ensembles in diamond for accurate vector magnetometry
• Dynamical Reorientation of Spin Multipoles in Silicon Carbide by Transverse Magnetic Fields