Electrical charge state manipulation of single silicon vacancies in a silicon carbide quantum optoelectronic device

Abstract

Colour centres with long-lived spins are established platforms for quantum sensing and quantum information applications. Colour centres exist in different charge states, each of them with distinct optical and spin properties. Application to quantum technology requires the capability to access and stabilize charge states for each specific task. Here, we investigate charge state manipulation of individual silicon vacancies in silicon carbide, a system which has recently shown a unique combination of long spin coherence time and ultrastable spin-selective optical transitions. In particular, we demonstrate charge state switching through the bias applied to the colour centre in an integrated silicon carbide opto-electronic device. We show that the electronic environment defined by the doping profile and the distribution of other defects in the device plays a key role for charge state control. Our experimental results and numerical modeling evidence that control of these complex interactions can, under certain conditions, enhance the photon emission rate. These findings open the way for deterministic control over the charge state of spin-active colour centres for quantum technology and provide novel techniques for monitoring doping profiles and voltage sensing in microscopic devices.

References in corpus (36)

• Quantum sensing
• Experimental loophole-free violation of a Bell inequality using entangled electron spins separated by 1.3 km
• Spins in few-electron quantum dots
• Silicon Quantum Electronics
• Coherent control of single spins in silicon carbide at room temperature
• Probing condensed matter physics with magnetometry based on nitrogen-vacancy centres in diamond
• Quantum error correction in a solid-state hybrid spin register
• Deterministic delivery of remote entanglement on a quantum network
• Photo induced ionization dynamics of the nitrogen vacancy defect in diamond investigated by single shot charge state detection
• Entanglement Distillation between Solid-State Quantum Network Nodes
• Room temperature quantum bit storage exceeding 39 minutes using ionized donors in 28-silicon
• High-fidelity spin and optical control of single silicon vacancy centres in silicon carbide
• Engineering near infrared single photon emitters in ultrapure silicon carbide
• Mechanical spin control of nitrogen-vacancy centers in diamond
• Optical charge state control of spin defects in 4H-SiC
• Quantum properties of dichroic silicon vacancies in silicon carbide
• Locking of electron spin coherence over fifty milliseconds in natural silicon carbide
• Tailoring spin defects in diamond
• Room temperature coherent spin alignment of silicon vacancies in 4H- and 6H-SiC
• Optical thermometry based on level anticrossing in silicon carbide
• Long-term data storage in diamond
• Spatial mapping of band bending in semiconductor devices using in-situ quantum sensors
• Identification of Si-vacancy related room temperature qubits in 4H silicon carbide
• Silicon vacancy center in 4H-SiC: Electronic structure and spin-photon interfaces
• High precision vector magnetometry with uniaxial quantum centers in silicon carbide
• Vector magnetometry using silicon vacancies in 4H-SiC at ambient conditions
• Protecting a diamond quantum memory by charge state control
• Stark Tuning and Electrical Charge State Control of Single Divacancies in Silicon Carbide
• Coulomb blockade in an atomically thin quantum dot coupled to a tunable Fermi reservoir
• Many body effects in the excitation spectrum of a defect in SiC
• Excitation properties of the divacancy in 4H-SiC
• Resonant optical spin initialization and readout of single silicon vacancies in 4H-SiC
• Ultrabright single-photon source on diamond with electrical pumping
• High-dynamic-range imaging of nanoscale magnetic fields using optimal control of a single qubit
• Bright single photon sources in lateral silicon carbide light emitting diodes
• Dynamics of single-photon emission from electrically pumped color centers

Cited by in corpus (20)

• Electrical and optical control of single spins integrated in scalable semiconductor devices
• Integrated quantum photonics with silicon carbide: challenges and prospects
• Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide
• Optical activation and detection of charge transport between individual color centers in room-temperature diamond
• Electrical control of single-photon emission in highly-charged individual colloidal quantum dots
• Novel color center platforms enabling fundamental scientific discovery
• Local vibrational modes of Si vacancy spin qubits in SiC
• Quantum Information Processing With Integrated Silicon Carbide Photonics
• Optical control of the charge state of color centers in hexagonal boron nitride
• Enhanced cavity coupling to silicon monovacancies in 4-H Silicon Carbide using below bandgap laser irradiation and low temperature thermal annealing
• Scalable fabrication of hemispherical solid immersion lenses in silicon carbide through grayscale hard-mask lithography
• Deterministic preparation of W states via spin-photon interactions
• Probing metastable space-charge potentials in a wide bandgap semiconductor
• Electrical Charge Control of h-BN Single Photon Sources
• Electrically-triggered spin-photon devices in silicon
• Quantum enhanced electric field mapping within semiconductor devices
• Suppression of the optical linewidth and spin decoherence of a quantum spin center in a $p$$-$$n$ diode
• Hyperfine-mediated transitions between electronic spin-1/2 levels of transition metal defects in SiC
• Broadband single-mode planar waveguides in monolithic 4H-SiC
• Elastic properties of cubic silicon carbide with Si vacancies