Record Surface State Mobility and Quantum Hall Effect in Topological Insulator Thin Films via Interface Engineering

Abstract

Material defects remain as the main bottleneck to the progress of topological insulators (TIs). In particular, efforts to achieve thin TI samples with dominant surface transport have always led to increased defects and degraded mobilities, thus making it difficult to probe the quantum regime of the topological surface states. Here, by utilizing a novel buffer layer scheme composed of an In2Se3/(Bi0.5In0.5)2Se3 heterostructure, we introduce a quantum generation of Bi2Se3 films with an order of magnitude enhanced mobilities than before. This scheme has led to the first observation of the quantum Hall effect in Bi2Se3.

33 pages, to be published in Nano Letters

References in corpus (31)

• Topological Insulators
• Experimental Observation of the Quantum Anomalous Hall Effect in a Magnetic Topological Insulator
• Spin Transfer Torque Generated by the Topological Insulator Bi_2Se_3
• Crossover of Three-Dimensional Topological Insulator of Bi2Se3 to the Two-Dimensional Limit
• Two-dimensional Dirac fermions in a topological insulator: transport in the quantum limit
• Topological origin of subgap conductance in insulating bilayer graphene
• Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi2Se3
• Bulk Fermi surface coexistence with Dirac surface state in Bi${}_2$Se${}_3$: a comparison of photoemission and Shubnikov-de Haas measurements
• Bulk Band Gap and Surface State Conduction Observed in Voltage-Tuned Crystals of the Topological Insulator Bi${}_2$Se${}_3$
• Observation of topological surface state quantum Hall effect in an intrinsic three-dimensional topological insulator
• Strong surface scattering in ultrahigh mobility Bi2Se3 topological insulator crystals
• Surface conduction of topological Dirac electrons in bulk insulating Bi2Se3
• Thickness-independent transport channels in topological insulator Bi2Se3 thin films
• Thickness-dependent bulk properties and weak anti-localization effect in topological insulator Bi2Se3
• A sudden collapse in the transport lifetime across the topological phase transition in $(B{i}_{1-x}I{n}_x{)}_{2}S{e}_3$
• Epitaxial growth of topological insulator Bi2Se3 film on Si(111) with atomically sharp interface
• Topological-Metal to Band-Insulator Transition in (Bi1-xInx)2Se3 Thin Films
• Quantum Hall Effect on Top and Bottom Surface States of Topological Insulator (Bi1-xSbx)2Te3 Films
• Transport Properties of Topological Insulators: Band Bending, Bulk Metal-to-Insulator Transition, and Weak Anti-Localization
• Fermi level tuning and a large activation gap achieved in the topological insulator Bi_{2}Te_{2}Se by Sn doping
• Emergence of decoupled surface transport channels in bulk insulating Bi2Se3 thin films
• Molecular beam epitaxy of high structural quality Bi2Se3 on lattice matched InP(111) substrates
• Surface versus bulk state in topological insulator Bi2Se3 under environmental disorder
• High-Resolution Faraday Rotation and Electron-Phonon Coupling in Surface States of the Bulk-Insulating Topological Insulator Cu${}_{0.02}$Bi${}_2$Se${}_3$
• Terahertz Kerr and Reflectivity Measurements on the Topological Insulator Bi2Se3
• 2D transport and screening in topological insulator surface states
• Electron Scattering in AlGaN/GaN Structures
• Superlattices of Bi2Se3/In2Se3: Growth Characteristics and Structural Properties
• Restoring Pristine Bi2Se3 Surface with an Effective Se Decapping Process
• Robust topological surface states of Bi2Se3 thin films on amorphous SiO2/Si substrate and a large ambipolar gating effect
• Thickness and growth-condition dependence of \emph{in-situ} mobility and carrier density of epitaxial thin-film Bi${}_2$Se${}_3$

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• Reversible Engineering of Topological Insulator Surface State Conductivity through Optical Excitation
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• A new type of cyclotron resonance from charge-impurity scattering in the bulk-insulating Bi${}_2$Se${}_3$ thin films
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