Observation of quantum-Hall effect in gated epitaxial graphene grown on SiC (0001)
arXiv:0908.3822 · doi:10.1063/1.3254329
Abstract
Epitaxial graphene films were formed on the Si-face of semi-insulating 4H-SiC substrates by a high temperature sublimation process. A high-k gate stack on epitaxial graphene is realized by inserting a fully oxidized nanometer thin aluminum film as a seeding layer followed by an atomic-layer deposition process. The electrical properties of epitaxial graphene films are sustained after gate stack formation without significant degradation. At low temperatures, the quantum-Hall effect in Hall resistance is observed along with pronounced Shubnikov-de Hass oscillations in diagonal magneto-resistance of gated epitaxial graphene on SiC (0001).
2 new references added
References in corpus (8)
- Electric Field Effect in Atomically Thin Carbon Films
- Experimental Observation of Quantum Hall Effect and Berry's Phase in Graphene
- Substrate-induced band gap opening in epitaxial graphene
- Realization of a High Mobility Dual-gated Graphene Field Effect Transistor with Al2O3 Dielectric
- Electronic structure of epitaxial graphene layers on SiC: effect of the substrate
- Epitaxial graphene transistors on SiC substrates
- Top-gated graphene field-effect-transistors formed by decomposition of SiC
- Correlating Raman Spectral Signatures with Carrier Mobility in Epitaxial Graphene: A Guide to Achieving High Mobility on the Wafer Scale
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- Statistical Study of Deep Sub-Micron Dual-Gated Field-Effect Transistors on Monolayer CVD Molybdenum Disulfide Films
- How Graphene-like is Epitaxial Graphene? \\Quantum Oscillations and Quantum Hall Effect
- The Integration of High-k Dielectric on Two-Dimensional Crystals by Atomic Layer Deposition
- Electronic Transport in Chemical Vapor Deposited Graphene Synthesized on Cu: Quantum Hall Effect and Weak Localization
- Epitaxial Graphene Electronic Structure And Transport
- Anomalously strong pinning of the filling factor nu=2 in epitaxial graphene
- Berry Phase and Pseudospin Winding Number in Bilayer Graphene
- Wafer-scale Epitaxial Graphene Growth on the Si-face of Hexagonal SiC (0001) for High Frequency Transistors
- Quantum resistance metrology using graphene
- Quantitatively Enhanced Reliability and Uniformity of High-κ Dielectrics on Graphene Enabled by Self-Assembled Seeding Layers
- Precision comparison of the quantum Hall effect in graphene and gallium arsenide
- Interplay between interferences and electron-electron interactions in epitaxial graphene
- Multi-carrier Transport in Epitaxial Multi-layer Graphene
- Ambipolar Graphene Field Effect Transistors by Local Metal Side Gates
- Quantum Hall effect on centimeter scale chemical vapor deposited graphene films
- Observation of the quantum Hall effect in epitaxial graphene on SiC(0001) with oxygen adsorption
- Growth of monolayer graphene on 8deg off-axis 4H-SiC (000-1) substrates with application to quantum transport devices
- Magneto-Transport Properties of Exfoliated Graphene on GaAs
- Quantum-Hall plateau-plateau transition in top-gated epitaxial graphene grown on SiC (0001)
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