Observation of quantum-Hall effect in gated epitaxial graphene grown on SiC (0001)

T. Shen, J. J. Gu, M. Xu +5

Epitaxial graphene films were formed on the Si-face of semi-insulating 4H-SiC substrates by a high temperature sublimation process. A high-k gate stack on epitaxial graphene is rea…