Theory of the spin relaxation of conduction electrons in silicon

Abstract

A realistic pseudopotential model is introduced to investigate the phonon-induced spin relaxation of conduction electrons in bulk silicon. We find a surprisingly subtle interference of the Elliott and Yafet processes affecting the spin relaxation over a wide temperature range, suppressing the significance of the intravalley spin-flip scattering, previously considered dominant, above roughly 120 K. The calculated spin relaxation times $T_1$ agree with the spin resonance and spin injection data, following a $T^{-3}$ temperature dependence. The valley anisotropy of $T_1$ and the spin relaxation rates for hot electrons are predicted.

4+ pages, 4 figures, to be published in PRL

References in corpus (6)

• Electronic measurement and control of spin transport in Silicon
• Coherent spin transport through a 350-micron-thick Silicon wafer
• Electron spin relaxation in bulk III-V semiconductors from a fully microscopic kinetic spin Bloch equation approach
• Spin polarized electron transport near the Si/SiO2 interface
• Spin injection from Fe into Si(001): ab initio calculations and role of the Si complex band structure
• Spin diffusion in Si/SiGe quantum wells: spin relaxation in the absence of D'yakonov-Perel' relaxation mechanism

Cited by in corpus (40)

• Spin dynamics in semiconductors
• Observation of the inverse spin Hall effect in silicon
• Electrons and holes in phosphorene
• Silicon spin communication
• Analysis of phonon-induced spin relaxation processes in silicon
• Spin-Orbit Symmetries of Conduction Electrons in Silicon
• Intrinsic Spin Lifetime of Conduction Electrons in Germanium
• Donor-driven spin relaxation in multi-valley semiconductors
• Electron spin-phonon interaction symmetries and tunable spin relaxation in silicon and germanium
• Spin-phonon relaxation from a universal \emph{ab initio} density-matrix approach
• Robust weak antilocalization due to spin-orbital entanglement in Dirac material Sr${}_3$SnO
• Theory of Spin-Dependent Phonon-Assisted Optical Transitions in Silicon
• Spin relaxation and coherence times for electrons at the Si/SiO2 interface
• Field-induced negative differential spin lifetime in silicon
• Giant g factor tuning of long-lived electron spins in Ge
• Carrier and Spin Coherent Dynamics in Strained Germanium-Tin Semiconductor on Silicon
• Reexamination of the Elliott-Yafet spin-relaxation mechanism
• Modeling spin transport in electrostatically-gated lateral-channel silicon devices: role of interfacial spin relaxation
• Elliott-Yafet Spin-Phonon Relaxation Times from First Principles
• The Larmor clock and anomalous spin dephasing in silicon
• Theory of optical spin orientation in silicon
• The Elliott-Yafet theory of spin relaxation generalized for large spin-orbit coupling
• Spin-dependent optical properties in strained silicon and germanium
• Room-temperature detection of spin accumulation in silicon across Schottky tunnel barriers using a MOSFET structure
• Suppressing spin relaxation in silicon
• Over 1% magnetoresistance ratio at room temperature in non-degenerate silicon-based lateral spin valves
• Closing the gap between spatial and spin dynamics of electrons at the metal-to-insulator transition
• Evidence of Pure Spin-Current Generated by Spin Pumping in Interface Localized States in Hybrid Metal-Silicon-Metal Vertical Structures
• Spin relaxation via exchange with donor impurity-bound electrons
• Investigation of spin scattering mechanism in silicon channels of Fe/MgO/Si lateral spin valves
• Effect of spin relaxation rate on the interfacial spin depolarization in ferromagnet/oxide/semiconductor contacts
• Spin-dependent inter- and intra-valley electron-phonon scattering in germanium
• Spin relaxation and the Elliott-Yafet parameter in W(001) ultrathin films: surface states, anisotropy and oscillation effects
• Generalized Elliott-Yafet spin-relaxation time for arbitrary spin mixing
• Hot-electron effect in spin relaxation of electrically injected electrons in intrinsic Germanium
• Nonexponential spin decay in a quantum kinetic description of the D'yakonov-Perel' mechanism mediated by impurity scattering
• Electric Field Modulation of Spin Transport
• Impurity-driven intervalley spin-flip scattering-induced 2D spin relaxation in silicon
• Derivation of Electron Spin Relaxation Rate by Electron-Phonon Interaction Using a New Diagram Method
• Microwave manipulation of electrically injected spin polarized electrons in silicon