Small Angle Shubnikov-de Haas Measurements in Silicon MOSFET's: the Effect of Strong In-Plane Magnetic Field
arXiv:cond-mat/0004201 · doi:10.1103/PhysRevLett.85.2164
Abstract
Measurements in magnetic fields applied at small angles relative to the electron plane in silicon MOSFETs indicate a factor of two increase of the frequency of Shubnikov-de Haas oscillations at H>H_{sat}. This signals the onset of full spin polarization above H_{sat}, the parallel field above which the resistivity saturates to a constant value. For H<H_{sat}, the phase of the second harmonic of the oscillations relative to the first is consistent with scattering events that depend on the overlap instead of the sum of the spin-up and spin-down densities of states.
4 pages; figures now inserted in text; additional reference
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