Material Development and Physical Properties of BiS2-Based Layered Compounds

Abstract

In 2012, we discovered superconductivity in Bi4O4S3 and LaO1-xFxBiS2, whose crystal structures are composed of alternate stacks of a BiS2-type conduction layer and a blocking layer. Since the discovery, many related superconductors and functional materials have been synthesized. Furthermore, the possibility of unconventional superconductivity has been proposed in recent theoretical and experimental studies. In addition, notable correlations between local structure and physical properties have been revealed in the BiS2-based systems. In this review article, we summarize the material development (probably all the compounds) and physical properties of BiS2-related materials developed in the last six years. The key parameters for the emergence of bulk superconductivity in the BiS2-based compounds are carrier doping to the parent phase (band insulator), pressure-induced structural transition, in-plane chemical pressure, and the suppression of in-plane disorder. We systematically review those parameters and the method of designing new superconductors with BiS2 layers. In addition, studies of BiS2-based compounds as thermoelectric materials are briefly reviewed.

review article, to appear in JPSJ special issue, 28 pages, 14 figures, 1 table

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• Synthesis of RE123 high-Tc superconductors with a high-entropy-alloy-type RE site
• Superconductivity in High-Entropy-Alloy Telluride AgInSnPbBiTe5
• Superconductivity in HEA-type compounds
• Unconventional isotope effect on transition temperature in BiS2-based superconductor Bi4O4S3
• Diamond anvil cell with boron-doped diamond heater for high-pressure synthesis and in-situ transport measurements
• Two-fold symmetry of in-plane magnetoresistance anisotropy in the superconducting states of BiCh2-based LaO0.9F0.1BiSSe single crystal
• First-principles study of LaOPbBiS${}_3$ and its analogous compounds as thermoelectric materials
• Possible pairing mechanism switching driven by structural symmetry breaking in BiS2-based layered superconductors
• Structural phase diagram of LaO1-xFxBiSSe: suppression of the structural phase transition by partial F substitutions
• First-principles study of defect formation energies in LaO$X$S${}_2$ ($X=$ Sb, Bi)
• Lattice Anharmonicity in BiS2-Based Layered Superconductor RE(O,F)BiS2 (RE = La, Ce, Pr, Nd)
• Bulk superconductivity in Pb-substituted BiS${}_2$-based compounds studied by hard-x-ray spectroscopy
• Pressure-induced superconductivity in layered pnictogen diselenide NdO${}_{0.8}$F${}_{0.2}$Sb${}_{1-x}$Bi${}_x$Se${}_2$ (x = 0.3 and 0.7)
• Bulk superconductivity induced by Se substitution in self-doped BiCh2-based compound CeOBiS2-xSex
• High pressure effects on La(O,F)BiS${}_2$ single crystal using diamond anvil cell with dual-probe diamond electrodes
• Investigation of superconducting properties and possible nematic superconductivity in self-doped BiCh2-based superconductor CeOBiS1.7Se0.3
• High-pressure effects on superconducting properties and crystal structure of Bi-based layered superconductor La2O2Bi3Ag0.6Sn0.4S6
• Improvement of superconducting properties by chemical pressure effect in Eu-doped La2-xEuxO2Bi3Ag0.6Sn0.4S6
• Superconductivity in Se-doped La2O2Bi2Pb2S6-xSex with a Bi2Pb2Ch4-type thick conducting layer
• Estimation of Grüneisen parameter of high-entropy-alloy-type functional materials
• Pressure-induced enhancement of two-dimensionality in LaO1-xFxBi(Se/S)2 superconductors
• High-pressure synthesis and superconducting properties of NaCl-type In1-xPbxTe (x = 0-0.8)
• Bulk superconductivity in La2O2M4S6-type layered oxychalcogenide La2O2Bi3Ag0.6Sn0.4S5.7Se0.3
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• Robustness of superconductivity to external pressure in high-entropy-alloy-type metal telluride AgInSnPbBiTe5
• The upper critical field in the BiCh2-based superconductors CeOBiS1.7Se0.3 and PrO0.5F0.5BiS2-xSex (x = 0, 0.3)
• Evolution of two bulk-superconducting phases in Sr0.5RE0.5FBiS2 (RE: La, Ce, Pr, Nd, Sm) by external hydrostatic pressure effect