Minimum model and its theoretical analysis for superconducting materials with BiS layers
arXiv:1211.6880 · doi:10.1016/j.phpro.2013.04.042
Abstract
We perform first principles band calculation of the newly discovered superconductor LaOFBiS, and study the lattice structure and the fluorine doping dependence of the gap between the valence and conduction bands. We find that the distance between La and S as well as the fluorine doping significantly affects the band gap. On the other hand, the four orbital model of the BiS layer shows that the lattice structure does not affect this portion of the band. Still, the band gap can affect the carrier concentration in the case of light electron doping, which in turn should affect the transport properties.
submitted as Proc. ISS2012, 4 pages, 4 figures
References in corpus (5)
- Superconductivity in novel BiS2-based layered superconductor LaO1-xFxBiS2
- Novel BiS2-based layered superconductor Bi4O4S3
- Superconductivity Appears in the Vicinity of an Insulating-Like Behavior in CeOFBiS
- Minimal electronic models for superconducting BiS layers
- Pressure Study of BiS2-Based Superconductors Bi4O4S3 and La(O,F)BiS2
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- Direct Observation of an Incommensurate Charge Density Wave in the BiS2-based Superconductor NdO1-xFxBiS2
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- Element Substitution Effect on Superconductivity in BiS2-Based NdO_{1-x}F_xBiS_2
- Normal state electronic properties of LaOFBiS superconductors