Proximity to Fermi-surface topological change in superconducting LaO0.54F0.46BiS2

Abstract

The electronic structure of nearly optimally-doped novel superconductor LaO${}_{1-x}$F${}_x$BiS${}_2$ ($x$ = 0.46) was investigated using angle-resolved photoemission spectroscopy (ARPES). We clearly observed band dispersions from 2 to 6 eV binding energy and near the Fermi level ($E_{\mathrm{F}}$), which are well reproduced by first principles calculations when the spin-orbit coupling is taken into account. The ARPES intensity map near $E_{\mathrm{F}}$ shows a square-like distribution around the $\Gamma$(Z) point in addition to electronlike Fermi surface (FS) sheets around the X(R) point, indicating that FS of LaO${}_{0.54}$F${}_{0.46}$BiS${}_2$ is in close proximity to the theoretically-predicted topological change.

arXiv comment6 pages, 3 figures, + supplemental material

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• Intrinsic Phase Diagram of Superconductivity in the BiCh2-based System Without In-plane Disorder
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• The magnetic and electronic properties of Oxyselenides - influence of transition metal ions and lanthanides
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• Prediction of the High Thermoelectric Performance of Pnictogen Dichalcogenide Layered Compounds with Quasi-One-Dimensional Gapped Dirac-like Band Dispersion
• Two-fold symmetry of in-plane magnetoresistance anisotropy in the superconducting states of BiCh2-based LaO0.9F0.1BiSSe single crystal
• Lattice Anharmonicity in BiS2-Based Layered Superconductor RE(O,F)BiS2 (RE = La, Ce, Pr, Nd)
• Normal state electronic properties of LaO${}_{1-x}$F${}_x$BiS${}_2$ superconductors