Electronic band structure and Fermi surface for new layered superconductor LaO0.5F0.5BiS2 in comparison with parent phase LaOBiS2 from first principles

Abstract

By means of first-principles calculations? we have probed the peculiarities of the elecrtonic band structure and Fermi surface for the recently discovered layered superconductor LaO0.5F0.5BiSi2 in comparison with the parent phase LaOBiO2. The electronic factors prpmoting the transition of LaOBiS2 upon fluorine doping to superconducting state: inter-layer charge transfer, the evolution of the Fermi surface, and the dependence of the near-Fermi densities of states on x for LaO1-xFxBiS2 are evaluated and discussed in comparison with the available experiments.

8 pages, 4 figures

References in corpus (3)

• High - Temperature Superconductivity in Iron Based Layered Compounds
• Superconductivity in WO2.6F0.4 synthesized by reaction of WO3 with Teflon
• Ab initio probing of the electronic band structure and Fermi surface of fluorine-doped WO3 as a novel low-TC superconductor

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• Effect of high pressure annealing on the normal state transport of LaO0.5F0.5BiS2
• Anisotropic upper critical field of BiS2-based superconductor LaO0.5F0.5BiS2
• Prediction of the High Thermoelectric Performance of Pnictogen Dichalcogenide Layered Compounds with Quasi-One-Dimensional Gapped Dirac-like Band Dispersion
• Electronic and magnetic properties of superconducting LnO${}_{1-x}$F${}_x$BiS${}_2$ (Ln = La, Ce, Pr, and Nd) from first principles
• Effects of stoichiometric doping in superconducting Bi-O-S compounds
• Pressure-induced enhancement of two-dimensionality in LaO1-xFxBi(Se/S)2 superconductors
• Normal state electronic properties of LaO${}_{1-x}$F${}_x$BiS${}_2$ superconductors
• Chemical Substitution and High Pressure Effects on Superconductors in the $Ln$OBiS${}_2$ ($Ln$ = La-Nd) System