Prediction of the High Thermoelectric Performance of Pnictogen Dichalcogenide Layered Compounds with Quasi-One-Dimensional Gapped Dirac-like Band Dispersion

Abstract

Thermoelectric power generation has been recognized as one of the most important technologies, and high-performance thermoelectric materials have long been pursued. However, because of the large number of candidate materials, this quest is extremely challenging, and it has become clear that a firm theoretical concept from the viewpoint of band-structure engineering is needed. In this study, we theoretically demonstrate that pnictogen-dichalcogenide layered compounds, which originally attracted attention as a family of superconductors and have recently been investigated as thermoelectric materials, can exhibit very high thermoelectric performance with elemental substitution. In particular, we clarify a promising guiding principle for materials design and find that LaOAsSe${}_2$, a material that has yet to be synthesized, has a powerfactor that is six times as large as that of the known compound LaOBiS${}_2$ and can exhibit a very large $ZT$ under some plausible assumptions. This large enhancement of the thermoelectric performance originates from the quasi-one-dimensional gapped Dirac-like band dispersion, which is realized by the square-lattice network. Our study offers one ideal limit of the band structure for thermoelectric materials. Because our target materials have high controllability of constituent elements and feasibility of carrier doping, experimental studies along this line are strongly awaited.

arXiv comment12 pages, 6 figures

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• Comparative first-principles study of antiperovskite oxides and nitrides as thermoelectric material: multiple Dirac cones, low-dimensional band dispersion, and high valley degeneracy
• Synthesis, Crystal Structure, and Thermoelectric Properties of Layered Antimony Selenides REOSbSe2 (RE = La, Ce)
• Enhancing thermopower and Nernst signal of high-mobility Dirac carriers by Fermi level tuning in the layered magnet EuMnBi${}_2$
• Pressure-induced Insulator to Metal Transition of Mixed Valence Compound Ce(O,F)SbS${}_2$
• First-principles study of LaOPbBiS${}_3$ and its analogous compounds as thermoelectric materials
• Thermoelectric performance of materials with Cu$C{h}_4$ ($Ch=$ S, Se) tetrahedra: Similarities and differences among their low-dimensional electronic structure from first principles
• First-principles study of defect formation energies in LaO$X$S${}_2$ ($X=$ Sb, Bi)
• Enhanced thermoelectricity by controlled local structure in bismuth-chalcogenides
• Effect of Bi Substitution on Thermoelectric Properties of SbSe2-based Layered Compounds NdO${}_{0.8}$F${}_{0.2}$Sb${}_{1-x}$Bi${}_x$Se${}_2$
• Pressure-induced superconductivity in layered pnictogen diselenide NdO${}_{0.8}$F${}_{0.2}$Sb${}_{1-x}$Bi${}_x$Se${}_2$ (x = 0.3 and 0.7)
• Crystal Structure and Thermoelectric Transport Properties of As-Doped Layered Pnictogen Oxyselenides NdO0.8F0.2Sb1-xAsxSe2
• Possible high thermoelectric power factor in alkali-metal-intercalated BC${}_3$: anisotropic multiple valleys originating from the van Hove singularity of graphene