Enhancement of thermoelectric properties by Se substitution in layered bismuth-chalcogenide LaOBiS2-xSex

Abstract

We have investigated the thermoelectric properties of the novel layered bismuth chalcogenides LaOBiS2-xSex. The partial substitution of S by Se produced the enhancement of electrical conductivity (metallic characteristics) in LaOBiS2-xSex. The power factor largely increased with increasing Se concentration. The highest power factor was 4.5 uW/cmK2 at around 470 deg. C for LaOBiS1.2Se0.8. The obtained dimensionless figure-of-merit (ZT) was 0.17 at around 470 deg. C in LaOBiS1.2Se0.8.

13 pages, 3 figs

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• Synthesis, Crystal Structure, and Physical Properties of New Layered Oxychalcogenide La2O2Bi3AgS6
• Structural phase diagram of LaO1-xFxBiSSe: suppression of the structural phase transition by partial F substitutions
• Enhanced thermoelectricity by controlled local structure in bismuth-chalcogenides
• Effect of Bi Substitution on Thermoelectric Properties of SbSe2-based Layered Compounds NdO${}_{0.8}$F${}_{0.2}$Sb${}_{1-x}$Bi${}_x$Se${}_2$
• Bulk superconductivity induced by Se substitution in self-doped BiCh2-based compound CeOBiS2-xSex
• Improvement of superconducting properties by chemical pressure effect in Eu-doped La2-xEuxO2Bi3Ag0.6Sn0.4S6
• Crystal Structure and Thermoelectric Transport Properties of As-Doped Layered Pnictogen Oxyselenides NdO0.8F0.2Sb1-xAsxSe2
• Evaluation of insulating behavior by Pb Substitution and Pressure-Induced Superconductivity in La2O2Bi3-xPb1+xS6