Electrical and Thermal Transport of Layered Bismuth-chalcogenide EuBiS2F at temperatures between 300 and 623 K

Abstract

We demonstrate the electrical and thermal transport of layered bismuth-based sulfide EuBiS2F from 300 to 623 K. Although significant hybridization between Eu 4f and Bi 6p electrons was reported previously, the carrier transport of the compound is similar to those of F-doped LaBiS2O, at least above 300 K. The lattice thermal conductivity is lower than that of isostructural SrBiS2F, which is attributed to heavier atomic mass of Eu ions.

9 pages, 2 figures

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• Prediction of the High Thermoelectric Performance of Pnictogen Dichalcogenide Layered Compounds with Quasi-One-Dimensional Gapped Dirac-like Band Dispersion
• Synthesis, Crystal Structure, and Physical Properties of New Layered Oxychalcogenide La2O2Bi3AgS6
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• Synthesis, Crystal Structure, and Thermoelectric Properties of Layered Antimony Selenides REOSbSe2 (RE = La, Ce)
• Effect of Bi Substitution on Thermoelectric Properties of SbSe2-based Layered Compounds NdO${}_{0.8}$F${}_{0.2}$Sb${}_{1-x}$Bi${}_x$Se${}_2$
• Crystal Structure and Thermoelectric Transport Properties of As-Doped Layered Pnictogen Oxyselenides NdO0.8F0.2Sb1-xAsxSe2