High-temperature thermoelectric properties of novel layered bismuth-sulfide LaO1-xFxBiS2

Abstract

We have investigated the high-temperature thermoelectric properties of the layered compound LaO1-xFxBiS2. The electrical resistivity of LaOBiS2 showed an anomalous behavior; a metal-semiconductor transition was observed around 270 K. It was found that the value of the electrical resistivity decreased with F substitution. The Seebeck coefficient decreased with increasing F concentration. The highest power factor of 1.9 W/cmK2 at 480 C was obtained for LaOBiS2.

13 pages, 7 figures

References in corpus (5)

• Superconductivity Appears in the Vicinity of an Insulating-Like Behavior in CeO${}_{1-x}$F${}_x$BiS${}_2$
• Superconductivity of F-substituted LnOBiS2 (Ln = La, Ce, Pr, Nd, Yb) compounds
• Ferroelectric Soft Phonons, Charge Density Wave Instability and Strong Electron-Phonon Coupling in BiS2-Layered Superconductors
• Superconductivity induced by La doping in Sr1-xLaxFBiS2 system
• Evolution of superconductivity in LaO1-xFxBiS2 prepared by high pressure technique

Cited by in corpus (11)

• Material Development and Physical Properties of BiS2-Based Layered Compounds
• Enhancement of thermoelectric properties by Se substitution in layered bismuth-chalcogenide LaOBiS2-xSex
• High thermoelectric performance and low thermal conductivity of densified LaOBiSSe
• Structures and Optical Absorption of Bi2OS2 and LaOBiS2
• Thermoelectric properties of new Bi-chalcogenide layered compounds
• Compositional and temperature evolution of crystal structure of new thermoelectric compound LaOBiS2-xSex
• Superconductivity and its Enhancement under High Pressure in "F-free" Single Crystals of CeOBiS${}_2$
• Electronic Origins of Large Thermoelectric Power Factor of LaOBiS2-xSex
• Prediction of the High Thermoelectric Performance of Pnictogen Dichalcogenide Layered Compounds with Quasi-One-Dimensional Gapped Dirac-like Band Dispersion
• Electrical and Thermal Transport of Layered Bismuth-chalcogenide EuBiS2F at temperatures between 300 and 623 K
• Growth and physical properties of Ce(O,F)Sb(S,Se)2 single crystals with site-selected chalcogen atoms