Enhanced thermoelectricity by controlled local structure in bismuth-chalcogenides

Abstract

Spectroscopic techniques, including photoelectron spectroscopy, diffuse reflectance, and x-ray absorption, are used to investigate the electronic structure and the local structure of LaOBiS${}_{2-x}$Se${}_x$ thermoelectric material. It is found that Se substitution effectively suppresses local distortion, that can be responsible for the increased carrier mobility together with a change in the electronic structure. The results suggest a possible way to control thermoelectric properties by tuning of the local crystal structure of these materials.

6 pages, 4 figures, 1 table, J. Appl. Phys. (in press)

References in corpus (8)

• Superconductivity Appears in the Vicinity of an Insulating-Like Behavior in CeO${}_{1-x}$F${}_x$BiS${}_2$
• Charge-density wave, superconductivity and $f$-electron valence instability in EuBiS${}_2$F
• In-plane Charge Fluctuations in Bismuth Sulfide Superconductors
• Enhancement of thermoelectric properties by Se substitution in layered bismuth-chalcogenide LaOBiS2-xSex
• Appearance of bulk Superconductivity under Hydrostatic Pressure in Sr0.5RE0.5FBiS2 (RE = Ce, Nd, Pr and Sm) compounds
• Predicted electronic markers for polytypes of LaOBiS2 examined via angular resolved photoemission spectroscopy
• Prediction of the High Thermoelectric Performance of Pnictogen Dichalcogenide Layered Compounds with Quasi-One-Dimensional Gapped Dirac-like Band Dispersion
• Synthesis, Crystal Structure, and Physical Properties of New Layered Oxychalcogenide La2O2Bi3AgS6