Enhancement of Tc by uniaxial lattice contraction in BiS2-based superconductor PrO0.5F0.5BiS2

Abstract

We investigated the crystal structure and superconducting properties of As-grown and high-pressure-annealed PrO0.5F0.5BiS2. We found that the high-pressure annealing generates uniaxial lattice contraction along the c axis. Both As-grown and high-pressure-annealed PrO0.5F0.5BiS2 show bulk superconductivity. The Tc of PrO0.5F0.5BiS2 is clearly enhanced from Tczero = 3.6 K to Tczero = 5.5 K by high-pressure annealing. Unexpectedly, the semiconducting characteristics is relatively enhanced by high-pressure annealing. Namely, we assume that the enhancement of Tc can not be understood by an increase of electron carriers. Having considered these facts, we conclude that the enhancement of Tc correlates with uniaxial lattice contraction along the c axis in PrO0.5F0.5BiS2.

10 pages, 3 figures; The lattice parameter c for the HP sample was revised

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• Observation of supermodulation in LaO0.5F0.5BiSe2 by scanning tunneling microscopy and spectroscopy
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• Superconductivity in Se-doped La2O2Bi2Pb2S6-xSex with a Bi2Pb2Ch4-type thick conducting layer
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• The upper critical field in the BiCh2-based superconductors CeOBiS1.7Se0.3 and PrO0.5F0.5BiS2-xSex (x = 0, 0.3)