paper

Pressure-Induced Phase Transition in LaSmOFBiS

arXiv:1507.03172 · doi:10.1103/PhysRevB.92.094507

Abstract

Electrical resistivity measurements on LaSmOFBiS ( = 0.1, 0.3, 0.6, 0.8) have been performed under applied pressures up to 2.6 GPa from 2 K to room temperature. The superconducting transition temperature of each sample significantly increases at a Sm-concentration dependent pressure , indicating a pressure-induced phase transition from a low- to a high- phase. The compounds that have higher Sm concentrations have higher values at ambient pressure; however, the values at decrease with and shifts to higher pressures with Sm substitution. In the normal state, semiconducting-like behavior is suppressed and metallic conduction is induced with increasing pressure in all of the samples. These results suggest that the pressure dependence of for the BiS-based superconductors is related to the lattice parameters at ambient pressure and enable us to estimate the evolution of for SmOFBiS under pressure.

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