Localized and mixed valence state of Ce in superconducting and ferromagnetic CeOFBiS revealed by x-ray absorption and photoemission spectroscopy
arXiv:1604.01880 · doi:10.1103/PhysRevB.94.081106
Abstract
We have performed Ce -edge x-ray absorption spectroscopy (XAS) and Ce - resonant photoemission spectroscopy (PES) on single crystals of CeOFBiS for and 0.5 in order to investigate the Ce electronic states. In the Ce -edge XAS, mixed valence of Ce was found in the sample and the F-doping suppresses it, which is consistent with the results on polycrystalline samples. As for the resonant PES, we found that the Ce electrons in both and systems respectively form a flat band at 1.0 eV and 1.4 eV below the Fermi level and there is no contribution to the Fermi surfaces. Interestingly, Ce valence in CeOBiS deviates from Ce even though Ce electrons are localized, indicating the Ce valence is not in a typical valence fluctuation regime. We assume that localized Ce in CeOBiS is mixed with the unoccupied Bi , which is consistent with the previous local structural study. Based on the analysis of the Ce -edge XAS spectra using Anderson's impurity model calculation, we found that the transfer integral becomes smaller increasing the number of Ce electrons upon the F substitution for O.
arXiv comment5 pages, 3 figures
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- Bulk Superconductivity Induced by Se Substitution in BiCh2-Based Layered Compounds Eu0.5Ce0.5FBiS2-xSex
- Superconductivity in La1-xCexOBiSSe: carrier doping by mixed valence of Ce ions
- Two-Dimensional Phase-Fluctuating Superconductivity in Bulk-Crystalline NdOFBiS