Superconductivity in La1-xCexOBiSSe: carrier doping by mixed valence of Ce ions

Abstract

We report the effects of Ce substitution on structural, electronic, and magnetic properties of layered bismuth-chalcogenide La1-xCexOBiSSe (x = 0-0.9), which are newly obtained in this study. Metallic conductivity was observed for x > 0.1 because of electron carriers induced by mixed valence of Ce ions, as revealed by bond valence sum calculation and magnetization measurements. Zero resistivity and clear diamagnetic susceptibility were obtained for x = 0.2-0.6, indicating the emergence of bulk superconductivity in these compounds. Dome-shaped superconductivity phase diagram with the highest transition temperature (Tc) of 3.1 K, which is slightly lower than that of F-doped LaOBiSSe (Tc = 3.7 K), was established. The present study clearly shows that the mixed valence of Ce ions can be utilized as an alternative approach for electron-doping in layered bismuth-chalcogenides to induce superconductivity.

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Cited by in corpus (5)

• Material Development and Physical Properties of BiS2-Based Layered Compounds
• Superconductivity of Electron-Doped NdOBiS2 by Substitution of Mixed-Valence Ce ions
• Investigation of superconducting properties and possible nematic superconductivity in self-doped BiCh2-based superconductor CeOBiS1.7Se0.3
• Bulk superconductivity induced by Se substitution in self-doped BiCh2-based compound CeOBiS2-xSex
• Superconductivity in Se-doped La2O2Bi2Pb2S6-xSex with a Bi2Pb2Ch4-type thick conducting layer