First single crystal growth and structural analysis of superconducting layered bismuth oxyselenide; La(O,F)BiSe2
arXiv:1406.0734 · doi:10.1016/j.jssc.2014.07.026
Abstract
Single crystal of La(O,F)BiSe2 was successfully grown for the first time by the CsCl flux method. Single crystal X-ray structural analysis clearly showed that La(O,F)BiSe2 crystalizes with space group P4/nmm (lattice parameters a = 4.1408(2) Å, c = 14.1096(6) Å). The structure is composed of alternating BiSe2 and LaO layers. Magnetic susceptibility and resistivity measurements showed the superconducting transition at 3.6 K, which is higher than that of as-grown La(O,F)BiS2. The structural analysis implies that La(O,F)BiSe2 is potential superconductor having higher Tc under high pressure.
19 pages, 4 figures, 3 tables
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- Site Selectivity on Chalcogen Atoms in Superconducting La(O,F)BiSSe
- Superconducting gap symmetry of the BiS-based superconductor LaOFBiSSe elucidated through specific heat measurement
- Superconductivity and its Enhancement under High Pressure in "F-free" Single Crystals of CeOBiS
- Growth and superconducting anisotropies of F-substituted LaOBiSe2 single crystals
- Pressure Tuned Enhancement of Superconductivity and Change of Ground State Properties in LaO0.5F0.5BiSe2 Single Crystals
- Pressure-induced phase transition for single crystalline LaO0.5F0.5BiSe2
- High pressure effects on non-fluorinated BiS2-based superconductors LaMOBiS (M = Ti and Th)
- Observation of supermodulation in LaO0.5F0.5BiSe2 by scanning tunneling microscopy and spectroscopy