Site Selectivity on Chalcogen Atoms in Superconducting La(O,F)BiSSe
arXiv:1412.8387 · doi:10.1063/1.4915302
Abstract
Single crystals of La(O,F)BiSSe were successfully grown by a CsCl flux method. Single crystal X-ray structural analysis revealed that the crystal structure is isostructural with BiS- or BiSe-based compounds with space group (lattice parameters = 4.1110(2) Å, = 13.6010(7) Å). However, the S atoms are selectively occupied at the apical site of the Bi-SSe pyramids in the superconducting layer. The single crystals show a superconducting transition at 4.2 K in the magnetic susceptibility and resistivity measurement. The superconducting anisotropic parameter is determined to be 34 from its upper critical magnetic field. The anisotropy is in the same range with that of other members of the La(O,F)BiCh ( = S, Se) family under ambient pressure.
17 pages + 2 pages for supplement, 6 figures
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Cited by in corpus (9)
- Bulk Superconductivity Induced by In-plane Chemical Pressure Effect in Eu0.5La0.5FBiS2-xSex
- Superconducting gap symmetry of the BiS-based superconductor LaOFBiSSe elucidated through specific heat measurement
- Superconductivity and its Enhancement under High Pressure in "F-free" Single Crystals of CeOBiS
- Superconductivity in Bi3O2S2Cl with Bi-Cl Planar Layers
- Growth and physical properties of Ce(O,F)Sb(S,Se)2 single crystals with site-selected chalcogen atoms
- Bulk superconductivity in Pb-substituted BiS-based compounds studied by hard-x-ray spectroscopy
- Investigation of superconducting properties and possible nematic superconductivity in self-doped BiCh2-based superconductor CeOBiS1.7Se0.3
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