98% directional guiding of spin currents with 90 micrometer relaxation length in bilayer graphene using carrier drift

Abstract

Electrical control of spin signals and long distance spin transport are major requirements in the field of spin electronics. Here we report the efficient guiding of spin currents at room temperature in high mobility hexagonal boron nitride encapsulated bilayer graphene using carrier drift. Our experiments, together with modelling, show that the spin relaxation length can be tuned from 2 to 88 micrometers when applying a DC current of $\mp$40 uA respectively. Our model predicts that, extending the range up to ${\mathrm{I}}_{\mathrm{dc}}=\mp$150 uA, the spin relaxation length can be tuned from 0.6 to 320 um respectively, indicating that spin relaxation lengths in the millimeter range are within scope in near future with moderate current densities. Our results also show that we are able to direct spin currents on either side of a spin injection contact. 98% of the injected spins flow to the left when ${\mathrm{I}}_{\mathrm{dc}}$= -40 uA and 65% flow to the right when the drift current is reversed. Our model shows that, for ${\mathrm{I}}_{\mathrm{dc}}=\mp$150 uA the numbers reach 99.8% and 95% respectively showing the potential of carrier drift for spin-based logic operations and devices.

20 pages, 6 figures

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• Modeling the Oblique Spin Precession in Lateral Spin Valves for Accurate Determination of Spin Lifetime Anisotropy: Effect of Finite Contact Resistance and Channel Length
• Simulations on the influence of spatially-varying spin transport parameters on the measured spin lifetime in graphene non-local spin valves
• Gate-tunable spin Hall effect in trilayer graphene/group-IV monochalcogenide van der Waals heterostructures
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• Carrier Drift Control of Spin Currents in Graphene-Based Spin-Current Demultiplexers
• Oblique spin injection to graphene via geometry controlled magnetic nanowires
• Spin polarised quantised transport via one-dimensional nanowire-graphene contacts
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• Theory of drift-enabled control in nonlocal magnon transport
• Gate-tunable charge-spin interconversion in graphene/heavy-metal heterostructures