Electrical characterization of fully encapsulated ultra thin black phosphorus-based heterostructures with graphene contacts

Abstract

The presence of finite bandgap and high mobility in semiconductor few-layer black phosphorus offers an attractive prospect for using this material in future two-dimensional electronic devices. Here we demonstrate for the first time fully encapsulated ultrathin (down to bilayer) black phosphorus field effect transistors in Van der Waals heterostructures to preclude their stability and degradation problems which have limited their potential for applications. Introducing monolayer graphene in our device architecture for one-atom-thick conformal source-drain electrodes enables a chemically inert boron nitride dielectric to tightly seal the black phosphorus surface. This architecture, generally applicable for other sensitive two-dimensional crystals, results in stable transport characteristics which are hysteresis free and identical both under high vacuum and ambient conditions. Remarkably, our graphene electrodes lead to contacts not dominated by thermionic emission, solving the issue of Schottky barrier limited transport in the technologically relevant two-terminal field effect transistor geometry.

References in corpus (23)

• Van der Waals heterostructures
• Black phosphorus field-effect transistors
• Boron nitride substrates for high-quality graphene electronics
• Phosphorene: A New 2D Material with High Carrier Mobility
• High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus
• Rediscovering Black Phosphorus: A Unique Anisotropic 2D Material for Optoelectronics and Electronics
• Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
• Tunable Band Gap and Anisotropic Optical Response in Few-layer Black Phosphorus
• Mobility engineering and metal-insulator transition in monolayer MoS2
• Fast and broadband photoresponse of few-layer black phosphorus field-effect transistors
• Micrometer-scale ballistic transport in encapsulated graphene at room temperature
• Isolation and characterization of few-layer black phosphorus
• Tuning the graphene work function by electric field effect
• Electric field effect in ultrathin black phosphorus
• Spin-Orbit Proximity Effect in Graphene
• High Mobility WSe2 p- and n-Type Field Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts
• MoS2 Dual-Gate MOSFET with Atomic-Layer-Deposited Al2O3 as Top-Gate Dielectric
• In Situ Thermal Decomposition of Exfoliated Two-Dimensional Black Phosphorus
• Low Resistance Metal Contacts to MoS2 Devices with Nickel-Etched-Graphene Electrodes
• Electronic transport in graphene-based heterostructures
• Anisotropic charged impurity-limited carrier mobility in monolayer phosphorene
• Exfoliating pristine black phosphorus down to the monolayer: photo-oxidation and electronic confinement effects
• Engineering Schottky Barrier in Black Phosphorus field effect devices for spintronic applications

Cited by in corpus (55)

• The Renaissance of Black Phosphorus
• Black phosphorus: narrow gap, wide applications
• Van der Waals metal-semiconductor junction: weak Fermi level pinning enables effective tuning of Schottky barrier
• Anisotropic in-plane thermal conductivity observed in few-layer black phosphorus
• Quality heterostructures from two dimensional crystals unstable in air by their assembly in inert atmosphere
• Performance of arsenene and antimonene double-gate MOSFETs from first principles
• Atomically thin p-n junctions based on two-dimensional materials
• Chemically Tailoring Semiconducting Two-Dimensional Transition Metal Dichalcogenides and Black Phosphorus
• Tuning Magnetotransport in a Compensated Semimetal at the Atomic Scale
• Interlayer Interactions in Anisotropic Atomically-thin Rhenium Diselenide
• First-Principles Study of Hybrid Graphene and MoS${}_2$ Nanocomposites
• Gate-tunable black phosphorus spin valve with nanosecond spin lifetimes
• Valleytronics in Tin (II) Sulfide
• Probing Single Vacancies in Black Phosphorus at the Atomic Level
• Probing Out-of-Plane Charge Transport in Black Phosphorus with Graphene-Contacted Vertical Field-Effect Transistors
• Electronic Structures of Hybrid Graphene/Phosphorene Nanocomposite
• First-principles study of two-dimensional van der Waals heterojunctions
• Heterostructured hBN-BP-hBN Nanodetectors at THz Frequencies
• Vacancies and oxidation of 2D group-IV monochalcogenides
• The Critical Role of Substrate in Stabilizing Phosphorene Nanoflake: A Theoretical Exploration
• KTlO: A metal shrouded 2D semiconductor with high carrier mobility and tunable magnetism
• Roadmap for Photonics with 2D Materials
• A Perspective on Recent Advances in Phosphorene Functionalization and its Application in Devices
• Long-Term Stabilization of Two-Dimensional Perovskites by Encapsulation with Hexagonal Boron Nitride
• van der Waals metamaterials
• Construction of van der Waals magnetic tunnel junction using ferromagnetic layered dichalcogenide
• van der Waals Bonded Co/h-BN Contacts to Ultrathin Black Phosphorus Devices
• Development of a Transferable Reactive Force Field of P/H Systems: Application to the Chemical and Mechanical Properties of Phosphorene
• Interlayer Coupling in Two-Dimensional Semiconductor Materials
• Enhanced ambient stability of exfoliated black phosphorus by passivation with nickel nanoparticles
• $\mathrm{Tl}{\mathrm{P}}_5$: An unexplored direct band gap 2D semiconductor with ultra-high carrier mobility
• Spatial conductivity mapping of unprotected and capped black phosphorus using microwave microscopy
• Imaging atomic vacancies in commercially available black phosphorus
• Highly anisotropic spin transport in ultrathin black phosphorus
• Tailoring electronic properties of multilayer phosphorene by siliconization
• Zero Bias Power Detector Circuits based on MoS${}_2$ Field Effect Transistors on Wafer-Scale Flexible Substrates
• Exciton in phosphorene: Strain, impurity, thickness and heterostructure
• Phosphorus oxide gate dielectric for black phosphorus field effect transistors
• The impact of hexagonal boron nitride encapsulation on the structural and vibrational properties of few layer black phosphorus
• Tailored nano-electronics and photonics with two-dimensional materials at terahertz frequencies
• Astability versus Bistability in van der Waals Tunnel Diode for Voltage Controlled Oscillator and Memory Applications
• Origin of Contact Resistance at Ferromagnetic Metal-Graphene Interfaces
• Charge carrier transport and lifetimes in n-type and p-type phosphorene as 2D device active materials: an ab initio study
• Electron spin dynamics of two-dimensional layered materials
• Negative Compressibility in Graphene-terminated Black Phosphorus Heterostructures
• Mono-elemental saturable absorber in mode-locked fiber laser: A review
• Electronic cloaking of confined states in phosphorene junctions
• Single-Crystalline Metallic Films Induced by van der Waals Epitaxy on Black Phosphorus
• Observation of A${}_g^1$ Raman mode splitting in few layers black phosphorus encapsulated with hexagonal boron nitride
• Continuous-wave and Transient Characteristics of Phosphorene Microwave Transistors
• Black Phosphorus based One-dimensional Photonic Crystals and Microcavities
• Anisotropy of the Optical Properties of Pentacene:Black Phosphorus Interfaces
• Semi-analytical model of the contact resistance in two-dimensional semiconductors
• Study of Black Phosphorus Using Angle-Resolved Polarized Raman Spectroscopy with 442 nm Excitation
• Experimentally Measured Field Effect Mobilities for Few Layer van der Waals Materials