activity
20102021
most citedElectrical characterization of fully encapsulated ultra thin black phosphorus-based heterostructures with graphene contacts

497 citations · 2.3k across the 13 of their papers we have counts for

collaborators

14 papers

physics.optics2021

Engineering optically active defects in hexagonal boron nitride using focused ion beam and water

Evgenii Glushkov, Michal Macha, Esther Rath +11

Hexagonal boron nitride (hBN) has emerged as a promising material platform for nanophotonics and quantum sensing, hosting optically-active defects with exceptional properties such…

cond-mat.soft2021

Anomalous interfacial dynamics of single proton charges in binary aqueous solutions

Jean Comtet, Archith Rayabharam, Evgenii Glushkov +6

Understanding the dynamics of charge exchange between a solid surface and a liquid is fundamental to various situations, ranging from nanofiltration to catalysis and electrochemist…

cond-mat.mes-hall2019★ 492 cited

Colloquium: Spintronics in graphene and other two-dimensional materials

A. Avsar, H. Ochoa, F. Guinea +3

After the first unequivocal demonstration of spin transport in graphene (Tombros et al., 2007), surprisingly at room temperature, it was quickly realized that this novel material w…

cond-mat.mes-hall2019★ 88 cited

Direct observation of water mediated single proton transport between hBN surface defects

Jean Comtet, Benoit Grosjean, Evgenii Glushkov +6

Aqueous proton transport at interfaces is ubiquitous and crucial for a number of fields, ranging from cellular transport and signaling, to catalysis and membrane science. However,…

cond-mat.mes-hall2018★ 301 cited

Control of interlayer excitons in two-dimensional van der Waals heterostructures

Alberto Ciarrocchi, Dmitrii Unuchek, Ahmet Avsar +3

Long-lived interlayer excitons with distinct spin-valley physics in van der Waals heterostructures based on transition metal dichalcogenides make them promising for information pro…

cond-mat.mes-hall2017★ 53 cited

van der Waals Bonded Co/h-BN Contacts to Ultrathin Black Phosphorus Devices

Ahmet Avsar, Jun Y. Tan, Luo Xin +6

Due to the chemical inertness of 2D hexagonal-Boron Nitride (h-BN), few atomic-layer h-BN is often used to encapsulate air-sensitive 2D crystals such as Black Phosphorus (BP). Howe…

cond-mat.mes-hall2017★ 143 cited

Gate-tunable black phosphorus spin valve with nanosecond spin lifetimes

Ahmet Avsar, Jun You Tan, Marcin Kurpas +5

Two-dimensional materials offer new opportunities for both fundamental science and technological applications, by exploiting the electron spin. While graphene is very promising for…

cond-mat.mes-hall2017★ 96 cited

Optospintronics in graphene via proximity coupling

Ahmet Avsar, Dmitrii Unuchek, Jiawei Liu +5

The observation of micron size spin relaxation makes graphene a promising material for applications in spintronics requiring long distance spin communication. However, spin depende…

cond-mat.mes-hall2016★ 42 cited

Electronic Spin Transport in Dual-Gated Bilayer Graphene

Ahmet Avsar, Ivan Jesus Vera-Marun, Jun You Tan +5

The elimination of extrinsic sources of spin relaxation is key in realizing the exceptional intrinsic spin transport performance of graphene. Towards this, we study charge and spin…

cond-mat.mes-hall2015

Enhanced spin-orbit coupling in dilute fluorinated graphene

Ahmet Avsar, Jong Hak Lee, Gavin Kok Wai Koon +1

The preservation and manipulation of a spin state mainly depends on the strength of the spin-orbit interaction. For pristine graphene, the intrinsic spin-orbit coupling (SOC) is on…

cond-mat.mes-hall2014★ 497 cited

Electrical characterization of fully encapsulated ultra thin black phosphorus-based heterostructures with graphene contacts

Ahmet Avsar, Ivan J. Vera-Marun, Tan Jun You +4

The presence of finite bandgap and high mobility in semiconductor few-layer black phosphorus offers an attractive prospect for using this material in future two-dimensional electro…

cond-mat.mes-hall2014★ 74 cited

Electronic transport in graphene-based heterostructures

J. Y. Tan, A. Avsar, J. Balakrishnan +8

While boron nitride (BN) substrates have been utilized to achieve high electronic mobilities in graphene field effect transistors, it is unclear how other layered two dimensional (…

cond-mat.mes-hall2011★ 228 cited

Towards wafer scale fabrication of graphene based spin valve devices

Ahmet Avsar, Tsung-Yeh Yang, Su-Kang Bae +9

We demonstrate injection, transport and detection of spins in spin valve arrays patterned in both copper based chemical vapor deposition (Cu-CVD) synthesized wafer scale single lay…

cond-mat.mes-hall2010★ 277 cited

Observation of Long Spin Relaxation Times in Bilayer Graphene at Room Temperature

T. -Y. Yang, J. Balakrishnan, F. Volmer +10

We report on the first systematic study of spin transport in bilayer graphene (BLG) as a function of mobility, minimum conductivity, charge density and temperature. The spin relaxa…